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Electronic localization around stacking faults in silicon carbide
Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden ABB Corp Res, SE-72178 Vasteras, Sweden Lulea Univ Technol, Dept Math, SE-97187 Lulea, Sweden Univ Newcastle Upon Tyne, Dept Phys, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England.
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi.
Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden ABB Corp Res, SE-72178 Vasteras, Sweden Lulea Univ Technol, Dept Math, SE-97187 Lulea, Sweden Univ Newcastle Upon Tyne, Dept Phys, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England.
2002 (engelsk)Inngår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 389-3, s. 529-532Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

First-principles band structure calculations of all the structurally different stacking faults that can be introduced by glide along the (0001) basal plane in 3C-, 4H-, and 6H-SiC are performed, based on the local-density approximation within the density-functional theory. Our calculations, using supercells containing 96 atoms, have revealed that both types of stacking faults in 4H-SiC and two of the three different SFs in 6H-SiC give rise to quasi-2D energy band states in the band gap at around 0.2 eV below the lowest conduction band, and are electrically active. The corresponding wave functions are strongly localized around the stacking fault plane. These results imply that stacking faults in these SiC polytypes are efficient planar traps for electron capture and responsible for subsequent electron-hole recombination. This can therefore have a profound influence on bipolar SiC technology.

sted, utgiver, år, opplag, sider
2002. Vol. 389-3, s. 529-532
Emneord [en]
band-gap states, first-principles calculations, stacking faults
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Identifikatorer
URN: urn:nbn:se:liu:diva-48813OAI: oai:DiVA.org:liu-48813DiVA, id: diva2:269709
Tilgjengelig fra: 2009-10-11 Laget: 2009-10-11 Sist oppdatert: 2017-12-12

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