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Influence of trenching effect on the characteristics of buried-gate SiC junction field-effect transistors
Royal Inst Technol, KTH, Dept Microelect & Informat Technol, SE-16440 Kista, Sweden Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden.
Royal Inst Technol, KTH, Dept Microelect & Informat Technol, SE-16440 Kista, Sweden Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden.
Royal Inst Technol, KTH, Dept Microelect & Informat Technol, SE-16440 Kista, Sweden Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden.
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2002 (Engelska)Ingår i: Materials Science Forum, Vols. 389-393, 2002, Vol. 389-3, s. 1235-1238Konferensbidrag, Publicerat paper (Refereegranskat)
Abstract [en]

Two different structures of junction field-effect transistors in 4H-SiC, with and without trenching effect in the channel region, have been fabricated and characterized. The devices formed with metal mask show a trenching profile (>similar to0.2 mum) after dry etch in the channel groove region and exhibited static induction transistor (SIT)-like characteristics in the sub-threshold region of I-V curves as the channel thickness decreases. The devices without trenching effect have been processed by using a wet-etched oxide mask resulting in a sloped dry-etch profile (theta=similar to30degrees) in the channel, and consequently showed well-saturated drain characteristics for all the channel thicknesses. The conduction mechanisms in these JFETs are examined by the potential profiles from two dimensional numerical simulations.

Ort, förlag, år, upplaga, sidor
2002. Vol. 389-3, s. 1235-1238
Nyckelord [en]
dry etching, JFETs, SiC, trenching effect
Nationell ämneskategori
Teknik och teknologier
Identifikatorer
URN: urn:nbn:se:liu:diva-48826OAI: oai:DiVA.org:liu-48826DiVA, id: diva2:269722
Konferens
ICSCRM2001
Tillgänglig från: 2009-10-11 Skapad: 2009-10-11 Senast uppdaterad: 2010-12-07

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Forsberg, UrbanJanzén, Erik

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