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Growth of epitaxial (SiC)(x)(AlN)(1-x) thin films on 6H-SiC by ion-assisted dual magnetron sputter deposition
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi.
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik.ORCID-id: 0000-0001-9140-6724
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik.
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik.ORCID-id: 0000-0002-2837-3656
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2002 (engelsk)Inngår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 389-3, s. 1481-1484Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

(SiC)(X)(AIN)(1-X) thin films have been grown epitaxially on vicinal 6H-SiC (0001) by low-energy ion assisted dual magnetron sputtering in UHV conditions. AES showed a decreasing Si and C content for an increasing magnetron power ratio, (P-Al/P-SiC). The epitaxial quality of the films was improved as the SiC fraction increased. Films containing less than 5% of Si and C show an evolution of domain width similar to the growth of pure AIN. HRXRD show a decreased c-axis lattice parameter for a film with composition of AINC(X) (0less than or equal toxless than or equal to0.1), indicating carbon substitution in AIN. CL spectra show defect-related peaks of similar to3.87 and similar to4.70 eV, corresponding to O and C impurities respectively as well as on un-identified peak at similar to3.40 eV.

sted, utgiver, år, opplag, sider
2002. Vol. 389-3, s. 1481-1484
Emneord [en]
AlN, epitaxial, SiC, sputter, thin film
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-48835OAI: oai:DiVA.org:liu-48835DiVA, id: diva2:269731
Tilgjengelig fra: 2009-10-11 Laget: 2009-10-11 Sist oppdatert: 2017-12-12

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Tungasmita, SukkanestePersson, PerSeppänen, TimoHultman, LarsBirch, Jens

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