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Electrical peculiarities in Al/Si/Ge/... /Ge/Si and Al/SiGe/Si structures
Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest 114, Hungary Linkoping Univ, Dept Phys, S-58183 Linkoping, Sweden.
Linköpings universitet, Tekniska högskolan.ORCID-id: 0000-0003-2749-8008
Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest 114, Hungary Linkoping Univ, Dept Phys, S-58183 Linkoping, Sweden.
Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest 114, Hungary Linkoping Univ, Dept Phys, S-58183 Linkoping, Sweden.
Vise andre og tillknytning
2002 (engelsk)Inngår i: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 190, nr 1-4, s. 403-407Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The current-voltage (I-V) and capacitance-voltage (C-V) behaviour of different Si/Ge multilayers and SiGe single layers prepared on p-type Si substrates by magnetron sputtering and annealing, has been studied in the temperature rang, of 80-320 K by using Al Schottky contacts as test structures. Although a significant influence of the microstructure of the Si/Ge multilayers and SiGe layers was obtained on the electrical behaviour of the structures, the structures exhibited similar specific features. (C) 2002 Elsevier Science B.V. All rights reserved.

sted, utgiver, år, opplag, sider
2002. Vol. 190, nr 1-4, s. 403-407
Emneord [en]
Si, SiGe, Schottky barrier, superlattice, amorphous, electrical behaviour
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-48883OAI: oai:DiVA.org:liu-48883DiVA, id: diva2:269779
Tilgjengelig fra: 2009-10-11 Laget: 2009-10-11 Sist oppdatert: 2017-12-12

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