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Type-I optical emissions in GeSi quantum dots
Intituto de Física Gleb Wataghin, Unicamp, CP 6165, Campinas, São Paulo 13083-970, Brazil.
Intituto de Física Gleb Wataghin, Unicamp, CP 6165, Campinas, São Paulo 13083-970, Brazil.
Intituto de Física Gleb Wataghin, Unicamp, CP 6165, Campinas, São Paulo 13083-970, Brazil.
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
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2007 (engelsk)Inngår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 91, nr 5Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The authors studied the optical emission of GeSi quantum dots under externally applied biaxial stress using samples grown with different temperatures varying from 430 to 700 °C. The optical emission energy of samples grown at low temperatures is rather insensitive to the applied external stress, consistent with the type-II band alignment. However, for samples grown at high temperatures we observed a large blueshift, which suggests type-I alignment. The result implies that recombination strength can be controlled by the growth temperature, which can be useful for optical device applications. © 2007 American Institute of Physics.

sted, utgiver, år, opplag, sider
2007. Vol. 91, nr 5
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-48911DOI: 10.1063/1.2764113OAI: oai:DiVA.org:liu-48911DiVA, id: diva2:269807
Tilgjengelig fra: 2009-10-11 Laget: 2009-10-11 Sist oppdatert: 2017-12-12

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