Interface effects in type-II CdSe/BeTe quantum dotsLinköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Chalmers, S-41296 Gothenburg, Sweden Gothenburg Univ, S-41296 Gothenburg, Sweden Univ Ulm, Abt Halbleiterphys, D-89081 Ulm, Germany Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany.
AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Chalmers, S-41296 Gothenburg, Sweden Gothenburg Univ, S-41296 Gothenburg, Sweden Univ Ulm, Abt Halbleiterphys, D-89081 Ulm, Germany Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany.
AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Chalmers, S-41296 Gothenburg, Sweden Gothenburg Univ, S-41296 Gothenburg, Sweden Univ Ulm, Abt Halbleiterphys, D-89081 Ulm, Germany Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Chalmers, S-41296 Gothenburg, Sweden Gothenburg Univ, S-41296 Gothenburg, Sweden Univ Ulm, Abt Halbleiterphys, D-89081 Ulm, Germany Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany.
AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Chalmers, S-41296 Gothenburg, Sweden Gothenburg Univ, S-41296 Gothenburg, Sweden Univ Ulm, Abt Halbleiterphys, D-89081 Ulm, Germany Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany.
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2002 (English)In: Physica status solidi. B, Basic research, ISSN 0370-1972, E-ISSN 1521-3951, Vol. 229, no 1, p. 489-492Article in journal (Refereed) Published
Abstract [en]
We report on optical and structural studies of the interface symmetry in CdSe/BeTe multiple-layer structures containing self-assembled quantum dots. Temperature and decay behavior of the broad photoluminescence (PL) band is consistent with the type-II transitions involving deeply localized electron states. Large linear in-plane polarization of the PL (up to 80%) is observed, implying the C-2v (or lower) symmetry of the individual places of the electron localization.
Place, publisher, year, edition, pages
2002. Vol. 229, no 1, p. 489-492
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48982OAI: oai:DiVA.org:liu-48982DiVA, id: diva2:269878
2009-10-112009-10-112017-12-12