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Micro-photoluminescence spectroscopy of exciton-polaritons in GaN with the wave vector k normal to the c-axis
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Russian Acad Sci, AF Ioffe Phys Tech Inst, Ctr Nanoheterostruct Phys, St Petersburg 194021, Russia Linkoping Univ, Dept Phys & Measurement Technol, S-581833 Linkoping, Sweden.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
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2001 (English)In: Physica status solidi. B, Basic research, ISSN 0370-1972, E-ISSN 1521-3951, Vol. 228, no 2, p. 481-484Article in journal (Refereed) Published
Abstract [en]

We report on polarized micro-photoluminescence (mu -PL) and micro-reflectance (mu -R) studies of GaN layers grown by HVPE. A strong pi -polarized component in the vicinity of A exciton is observed in the mu -PL and attributed as a mixture of a bound B exciton, dominating at low temperature, and scattered A exciton-polariton states prevailing at higher temperatures. Temperature variation of exciton energies in the mu -R spectra reveals strain-induced difference between the top surface and the cleaved edges.

Place, publisher, year, edition, pages
2001. Vol. 228, no 2, p. 481-484
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-49026OAI: oai:DiVA.org:liu-49026DiVA, id: diva2:269922
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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Shubina, TatianaPaskova, TanjaLebedev, AlexanderMonemar, Bo

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Shubina, TatianaPaskova, TanjaLebedev, AlexanderMonemar, Bo
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