Optical characterization of InGaN/GaN MQW structures without in phase separationShow others and affiliations
2001 (English)In: Physica status solidi. B, Basic research, ISSN 0370-1972, E-ISSN 1521-3951, Vol. 228, no 1, p. 157-160Article in journal (Refereed) Published
Abstract [en]
Photoluminescence and cathodoluminescence spectroscopies are used to investigate the properties of the band edge emission of InGaN/(In)GaN multiple quantum well (MQW) structures which do not show evidence of phase separation in high resolution electron microscopy. The data still show a clear low energy peak in the spectra. about 0.1 eV below the main exciton peak. Possible interpretations of this second peak are discussed.
Place, publisher, year, edition, pages
2001. Vol. 228, no 1, p. 157-160
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-49050OAI: oai:DiVA.org:liu-49050DiVA, id: diva2:269946
2009-10-112009-10-112017-12-12