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3-d thermal and flow modeling of hot wall epitaxial chemical vapor deposition reactors, heated by induction
ABB Corp Res, SE-72178 Vasteras, Sweden Royal Inst Technol, Faxen Lab, SE-10044 Stockholm, Sweden Linkoping Univ, IFM, SE-58183 Linkoping, Sweden.
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi.
ABB Corp Res, SE-72178 Vasteras, Sweden Royal Inst Technol, Faxen Lab, SE-10044 Stockholm, Sweden Linkoping Univ, IFM, SE-58183 Linkoping, Sweden.
ABB Corp Res, SE-72178 Vasteras, Sweden Royal Inst Technol, Faxen Lab, SE-10044 Stockholm, Sweden Linkoping Univ, IFM, SE-58183 Linkoping, Sweden.
2000 (engelsk)Inngår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 338-3, s. 153-156Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

A three dimensional computational model for temperature and flow predictions in hot wall chemical vapor deposition (CVD) reactors, heated by induction, is presented. It includes heating by a Radio Frequency (RF) coil, flow and heat transfer. Thermal radiation is modeled by a modified Monte Carlo method. Model predictions are compared to full scale experiments at Linkoping CVD reactor for epitaxial growth of silicon carbide (SIC). Both streamwise and spanwise temperature gradients are well predicted, with the temperature maximum location shifted slightly upstream compared to the measured. Additionally, the model succeeds in predicting a recirculation zone just downstream of the susceptor. It is demonstrated how thermal gradients can be greatly reduced by simple geometrical changes.

sted, utgiver, år, opplag, sider
2000. Vol. 338-3, s. 153-156
Emneord [en]
CVD, epitaxial growth, hot-wall, numerical simulation
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-49431OAI: oai:DiVA.org:liu-49431DiVA, id: diva2:270327
Tilgjengelig fra: 2009-10-11 Laget: 2009-10-11 Sist oppdatert: 2017-12-12

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