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Optical characterization of 4H-SiC by variable angle of incidence spectroscopic ellipsometry
Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden.
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad optik.ORCID-id: 0000-0001-9229-2028
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden.
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2000 (engelsk)Inngår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 338-3, s. 575-578Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

A variable angle of incidence spectroscopic ellipsometer equipped with a compensator has been used to determine the dielectric functions in the 0.74 - 6 eV photon energy range of n-type bulk 4H-SiC with doping concentrations between 10(17) and 10(19) cm(-3). The resulting dielectric function for different SiC wafers depends on the doping concentration, especially around the absorption onset and higher photon energies. Measurements on different wafers with the same doping show good reproducibility. Simulations and preliminary measurements show that ellipsometry might be useful for thickness determination of thin (<1 m) homoepitaxial films.

sted, utgiver, år, opplag, sider
2000. Vol. 338-3, s. 575-578
Emneord [en]
doping concentration, ellipsometry, SiC dielectric function
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-49439OAI: oai:DiVA.org:liu-49439DiVA, id: diva2:270335
Tilgjengelig fra: 2009-10-11 Laget: 2009-10-11 Sist oppdatert: 2017-12-12

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Arwin, HansForsberg, UrbanJärrendahl, Kenneth

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