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Al/Si ohmic contacts to p-type 4H-SiC for power devices
Bulgarian Acad Sci, Inst Appl Phys, BG-4000 Plovdiv, Bulgaria IMC Ind Microelect Ctr, SE-16421 Kista, Sweden Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden.
Bulgarian Acad Sci, Inst Appl Phys, BG-4000 Plovdiv, Bulgaria IMC Ind Microelect Ctr, SE-16421 Kista, Sweden Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden.
Bulgarian Acad Sci, Inst Appl Phys, BG-4000 Plovdiv, Bulgaria IMC Ind Microelect Ctr, SE-16421 Kista, Sweden Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden.
Bulgarian Acad Sci, Inst Appl Phys, BG-4000 Plovdiv, Bulgaria IMC Ind Microelect Ctr, SE-16421 Kista, Sweden Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden.
Vise andre og tillknytning
2000 (engelsk)Inngår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 338-3, s. 1009-1012Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The formation of Al/Si/p-4H SiC ohmic contacts at temperatures as low as 750 degreesC is reported in this paper. The dependence of electrical properties and contact morphology have been investigated as a function of the annealing regime in the interval 600-700 degreesC. The lowest contact resistivity of 3.8x10(-5) Omega .cm(2) was obtained at 700 degreesC annealing, however the most reproducible results were in the low 10(-4) Omega .cm(2) range. It has been established that the predominate current transport mechanism in the Al/Si/SiC contacts is thermionic-field emission. Atomic force microscopy showed that the addition of Si to the contact layer improves its morphology, and the pitting of annealed Al is not observed. The contacts developed are stable during ageing at 500 degreesC and at operating temperatures up to 450 degreesC. After the contacts testing with current density of 10(3) A/cm(2) at temperatures up to 450 degreesC, their contact resistivity decreases slightly.

sted, utgiver, år, opplag, sider
2000. Vol. 338-3, s. 1009-1012
Emneord [en]
annealing, contact resistivity, temperature stability
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-49453OAI: oai:DiVA.org:liu-49453DiVA, id: diva2:270349
Tilgjengelig fra: 2009-10-11 Laget: 2009-10-11 Sist oppdatert: 2017-12-12

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