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Real-time assessment of overlayer removal on 4H-SiC surfaces: Techniques and relevance to contact formation
Linkoping Univ, Dept Phys, SE-58183 Linkoping, Sweden N Carolina State Univ, Raleigh, NC USA Tech Univ Berlin, Inst Festkorperphys, DE-13355 Berlin, Germany.
Linkoping Univ, Dept Phys, SE-58183 Linkoping, Sweden N Carolina State Univ, Raleigh, NC USA Tech Univ Berlin, Inst Festkorperphys, DE-13355 Berlin, Germany.
Linkoping Univ, Dept Phys, SE-58183 Linkoping, Sweden N Carolina State Univ, Raleigh, NC USA Tech Univ Berlin, Inst Festkorperphys, DE-13355 Berlin, Germany.
Linkoping Univ, Dept Phys, SE-58183 Linkoping, Sweden N Carolina State Univ, Raleigh, NC USA Tech Univ Berlin, Inst Festkorperphys, DE-13355 Berlin, Germany.
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2000 (engelsk)Inngår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 338-3, s. 1033-1036Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

We applied real-time spectroscopic ellipsometric (SE) measurements to assess the removal of overlayer material from 4H-SiC Si- and C-face surfaces in order to investigate the final step of an otherwise standard RCA cleaning regimen commonly used to prepare SiC surfaces for contact formation. The selected treatments (buffered hydrofluoric acid (HF), concentrated HF, dilute HF and 5% HF in Methanol) removed 4 to 40 Angstrom of effective SiO2 overlayer thickness from these surfaces. We also found that the concentrated HF treatment yielded the best surface, i.e. the most abrupt bulk-to-ambient transition region.

sted, utgiver, år, opplag, sider
2000. Vol. 338-3, s. 1033-1036
Emneord [en]
cleaning, contact, spectroscopic ellipsometry, surface preparation, synchrotron
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Identifikatorer
URN: urn:nbn:se:liu:diva-49454OAI: oai:DiVA.org:liu-49454DiVA, id: diva2:270350
Tilgjengelig fra: 2009-10-11 Laget: 2009-10-11 Sist oppdatert: 2017-12-12

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