Recent developments in the III-nitride materialsShow others and affiliations
2007 (English)In: Physica status solidi. B, Basic research, ISSN 0370-1972, E-ISSN 1521-3951, Vol. 244, no 6, p. 1759-1768Article in journal (Refereed) Published
Abstract [en]
We review a selection of recent research work on III-nitride materials, limiting the scope to bulk properties and quantum well structures. The different stages of development of the compounds AlN, GaN and InN are illustrated, with reference to the electronic properties demonstrated so far. The important alloy systems AlxGa1-xN and InxGa1-x have quite different properties, still not understood in detail for high Al and In contents, respectively. Some important unresolved issues are highlighted, and possible future directions of the materials development are indicated. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.
Place, publisher, year, edition, pages
Weinheim, Germany: Wiley-VCH Verlagsgesellschaft, 2007. Vol. 244, no 6, p. 1759-1768
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-49488DOI: 10.1002/pssb.200674836ISI: 000247328200001OAI: oai:DiVA.org:liu-49488DiVA, id: diva2:270384
Conference
International Workshop on Nitride Semiconductors 2006 (IWN 2006), Kyoto, Japan, October 22-27 2006
2009-10-112009-10-112017-12-12Bibliographically approved