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Hydride vapour phase homoepitaxial growth of GaN on MOCVD-grown 'templates'
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi.
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi.
Linkoping Univ, IFM, S-58183 Linkoping, Sweden Univ Sofia, Fac Phys, Sofia 1164, Bulgaria Aixtron AG, D-52072 Aachen, Germany.
Vise andre og tillknytning
2000 (engelsk)Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

We report on an improved quality of thick HVPE-GaN grown on MOCVD-GaN 'template' layers compared to the material grown directly on sapphire. The film-substrate interface revealed by cathodoluminescence measurements shows an absence of highly doped columnar structures which are typically present in thick HVPE-GaN films grown directly on sapphire. This improved structure results in a reduction of two orders of magnitude of the free carrier concentration from Hall measurements. It was found that the structure, morphology, electrical and optical properties of homoepitaxial thick GaN layers grown by HVPE were strongly influenced by the properties of the MOCVD-GaN 'template'. Additionally the effect of Si doping of the GaN buffer layers on the HVPE-GaN properties was analysed.

sted, utgiver, år, opplag, sider
Warrendale: Materials Research Society, 2000. Vol. 5
Serie
Materials Research Society Symposium Procedings, ISSN 0272-9172 ; 595
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-49514DOI: 10.1557/PROC-595-F99W3.14ISBN: 155899503X (tryckt)OAI: oai:DiVA.org:liu-49514DiVA, id: diva2:270410
Konferanse
MRS'99 Fall Meeting, Boston, USA, 29 November - 3 December 1999
Tilgjengelig fra: 2009-10-11 Laget: 2009-10-11 Sist oppdatert: 2015-03-09

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