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Interface structure of hydride vapor phase epitaxial GaN grown with high-temperature reactively sputtered AlN buffer
Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden.
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi.
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi.
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik.ORCID-id: 0000-0001-9140-6724
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2000 (engelsk)Inngår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 76, nr 14, s. 1860-1862Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Thick hydride vapor phase epitaxy GaN layers have been grown on a-plane sapphire using high-temperature ion-assisted reactively sputtered AlN as a buffer layer. Transmission electron microscopy and atomic force microscopy were carried out to study the formation of the two interfaces sapphire/AlN and AlN/GaN, and their influence on the microstructure of both the buffer layer and the main GaN layer. It was demonstrated that the high-temperature reactively sputtered buffer layer provides a good alternative for hydride vapor phase epitaxy growth of GaN layers. In particular, the buffer promotes a specific interface ordering mechanism different from that observed on low-temperature buffers. (C) 2000 American Institute of Physics. [S0003-6951(00)00314-4].

sted, utgiver, år, opplag, sider
2000. Vol. 76, nr 14, s. 1860-1862
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URN: urn:nbn:se:liu:diva-49811OAI: oai:DiVA.org:liu-49811DiVA, id: diva2:270707
Tilgjengelig fra: 2009-10-11 Laget: 2009-10-11 Sist oppdatert: 2017-12-12

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