liu.seSearch for publications in DiVA
Endre søk
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Enhanced quality of epitaxial AlN thin films on 6H-SiC by ultra-high-vacuum ion-assisted reactive dc magnetron sputter deposition
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi.
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik.
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik.ORCID-id: 0000-0001-9140-6724
Linköpings universitet, Tekniska högskolan.ORCID-id: 0000-0003-2749-8008
Vise andre og tillknytning
2000 (engelsk)Inngår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 76, nr 2, s. 170-172Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Epitaxial AlN thin films have been grown on 6H-SiC substrates by ultra-high-vacuum (UHV) ion-assisted reactive dc magnetron sputtering. The low-energy ion-assisted growth (E-i = 17-27 eV) results in an increasing surface mobility, promoting domain-boundary annihilation and epitaxial growth. Domain widths increased from 42 to 135 nm and strained-layer epitaxy was observed in this energy range. For E-i> 52 eV, an amorphous interfacial layer of AlN was formed on the SiC, which inhibited epitaxial growth. Using UHV condition and very pure nitrogen sputtering gas yielded reduced impurity levels in the films (O: 3.5 x 10(18) cm(-3)). Analysis techniques used in this study are in situ reflection high-energy electron diffraction, secondary-ion-mass spectroscopy, atomic-force microscopy, x-ray diffraction, and cross-section high-resolution electron microscopy. (C) 2000 American Institute of Physics. [S0003-6951(00)01802-7].

sted, utgiver, år, opplag, sider
2000. Vol. 76, nr 2, s. 170-172
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-49923OAI: oai:DiVA.org:liu-49923DiVA, id: diva2:270819
Tilgjengelig fra: 2009-10-11 Laget: 2009-10-11 Sist oppdatert: 2017-12-12

Open Access i DiVA

Fulltekst mangler i DiVA

Personposter BETA

Tungasmita, SukkanesteBirch, JensPersson, PerJärrendahl, KennethHultman, Lars

Søk i DiVA

Av forfatter/redaktør
Tungasmita, SukkanesteBirch, JensPersson, PerJärrendahl, KennethHultman, Lars
Av organisasjonen
I samme tidsskrift
Applied Physics Letters

Søk utenfor DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric

urn-nbn
Totalt: 227 treff
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf