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Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
Institute of Solid State Physics, University of Bremen, 28359 Bremen, Germany.
Department of Electrical Engineering, University of Nebraska, Lincoln, NE 68588, United States.
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
Vise andre og tillknytning
2007 (engelsk)Inngår i: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 300, nr 1, s. 233-238Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

We have studied phonons in two types of anisotropically strained GaN films: c-plane GaN films grown on a-plane sapphire and a-plane GaN films grown on r-plane sapphire. The anisotropic strain in the films is determined by high-resolution X-ray diffraction (HRXRD) in different measuring geometries and the phonon parameters have been assessed by generalized infrared spectroscopic ellipsometry (GIRSE). The effect of strain anisotropy on GaN phonon frequencies is presented and the phonon deformation potentials aA1 (TO), bA1 (TO), cE1 (TO) and cE1 (LO) are determined. © 2006 Elsevier B.V. All rights reserved.

sted, utgiver, år, opplag, sider
2007. Vol. 300, nr 1, s. 233-238
Emneord [en]
A1. High-resolution X-ray diffraction, A1. Infrared spectroscopic ellipsometry, A1. Phonons, B1. GaN
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Identifikatorer
URN: urn:nbn:se:liu:diva-49988DOI: 10.1016/j.jcrysgro.2006.11.023OAI: oai:DiVA.org:liu-49988DiVA, id: diva2:270884
Tilgjengelig fra: 2009-10-11 Laget: 2009-10-11 Sist oppdatert: 2017-12-12

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