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Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
Institute of Tecnology and Nucl, Portugal .
Institute of Tecnology and Nucl, Portugal .
Institute of Tecnology and Nucl, Portugal .
Vise andre og tillknytning
2010 (engelsk)Inngår i: APPLIED PHYSICS LETTERS, ISSN 0003-6951, Vol. 96, nr 8, s. 081907-Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

We study the unintentional H impurities in relation to the free electron properties of state-of-the-art InN films grown by molecular beam epitaxy (MBE). Enhanced concentrations of H are revealed in the near surface regions of the films, indicating postgrowth surface contamination by H. The near surface hydrogen could not be removed upon thermal annealing and may have significant implications for the surface and bulk free electron properties of InN. The bulk free electron concentrations were found to scale with the bulk H concentrations while no distinct correlation with dislocation density could be inferred, indicating a major role of hydrogen for the unintentional conductivity in MBE InN.

sted, utgiver, år, opplag, sider
2010. Vol. 96, nr 8, s. 081907-
Emneord [en]
annealing, dislocation density, doping profiles, hydrogen, III-V semiconductors, impurities, indium compounds, molecular beam epitaxial growth, semiconductor doping, semiconductor epitaxial layers, semiconductor growth, surface contamination, wide band gap semiconductors
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Identifikatorer
URN: urn:nbn:se:liu:diva-54406DOI: 10.1063/1.3327333ISI: 000275027200022OAI: oai:DiVA.org:liu-54406DiVA, id: diva2:303521
Merknad

Original Publication: Vanya Darakchieva, K Lorenz, N P Barradas, E Alves, Bo Monemar, M Schubert, N Franco, C L Hsiao, L C Chen, W J Schaff, L W Tu, T Yamaguchi and Y Nanishi, Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material, 2010, APPLIED PHYSICS LETTERS, (96), 8, 081907. http://dx.doi.org/10.1063/1.3327333 Copyright: American Institute of Physics http://www.aip.org/

Tilgjengelig fra: 2010-03-12 Laget: 2010-03-12 Sist oppdatert: 2013-05-01

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