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Formation of basal plane fiber-textured Ti2AlN films on amorphous substrates
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
Forschungszentrum Dresden Rossendorf.
Vise andre og tillknytning
2010 (engelsk)Inngår i: PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, ISSN 1862-6254, Vol. 4, nr 05-Jun, s. 121-123Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The synthesis of fiber-textured Ti2AlN(0001) films on SiO2 was characterized by in-situ and ex-situ X-ray scattering and Rutherford backscattering spectrometry. Ti2AlN was formed by solid-state reaction between sequentially deposited Ti and AlN layers. A deposition at 275 degrees C yields a Ti(0001) out-of-plane orientation which is maintained for the following AlN(0001)/Ti(0001) layers. Annealing to 600 degrees C yields AlN decomposition and diffusion of Al and N into Ti, with consecutive transformation into (TiAlN)-Al-3(111) and Ti2AlN(0001) plus AlN residuals. Despite preferred Ti2AlN(0001) out-of-plane orientation, the in-plane distribution is random, as expected from the self-organized pseudo-epitaxial growth.

sted, utgiver, år, opplag, sider
John Wiley and Sons, Ltd , 2010. Vol. 4, nr 05-Jun, s. 121-123
Emneord [en]
X-ray diffraction; thin films; growth; sputtering
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-58222DOI: 10.1002/pssr.201004100ISI: 000279658900009OAI: oai:DiVA.org:liu-58222DiVA, id: diva2:338060
Tilgjengelig fra: 2010-08-10 Laget: 2010-08-09 Sist oppdatert: 2019-01-28

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