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Ohmic contact properties of magnetron sputtered Ti3SiC2 on n- and p-type 4H-silicon carbide
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad Fysik. Linköpings universitet, Tekniska högskolan.
Royal Institute of Technology.
Royal Institute of Technology.
Royal Institute of Technology.
Vise andre og tillknytning
2011 (engelsk)Inngår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 98, nr 4, s. 042108-Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Epitaxial Ti3SiC2 (0001) thin film contacts were grown on doped 4H-SiC (0001) using magnetron sputtering in an ultra high vacuum system. The specific contact resistance was investigated using linear transmission line measurements. Rapid thermal annealing at 950 degrees C for 1 min of as-deposited films yielded ohmic contacts to n-type SiC with contact resistances in the order of 10(-4) Omega cm(2). Transmission electron microscopy shows that the interface between Ti3SiC2 and n-type SiC is atomically sharp with evidence of interfacial ordering after annealing.

sted, utgiver, år, opplag, sider
American Institute of Physics , 2011. Vol. 98, nr 4, s. 042108-
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Identifikatorer
URN: urn:nbn:se:liu:diva-67170DOI: 10.1063/1.3549198ISI: 000286676600025OAI: oai:DiVA.org:liu-67170DiVA, id: diva2:407781
Merknad

Original Publication: Kristina Buchholt, R Ghandi, M Domeij, C-M Zetterling, Jun Lu, Per Eklund, Lars Hultman and Anita Lloyd Spetz, Ohmic contact properties of magnetron sputtered Ti3SiC2 on n- and p-type 4H-silicon carbide, 2011, APPLIED PHYSICS LETTERS, (98), 4, 042108. http://dx.doi.org/10.1063/1.3549198 Copyright: American Institute of Physics http://www.aip.org/

Tilgjengelig fra: 2011-04-01 Laget: 2011-04-01 Sist oppdatert: 2017-12-11bibliografisk kontrollert
Inngår i avhandling
1. Nanostructured materials for gas sensing applications
Åpne denne publikasjonen i ny fane eller vindu >>Nanostructured materials for gas sensing applications
2011 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

In this Thesis I have investigated the use of nanostructured films as sensing and contact layers for field effect gas sensors in order to achieve high sensitivity, selectivity, and long term stability of the devices in corrosive environments at elevated temperatures. Electrochemically synthesized Pd and Au nanoparticles deposited as sensing layers on capacitive field effect devices were found to give a significant response to NOx with small, or no responses to H2, NH3, and C3H6. Pt nanoparticles incorporated in a TiC matrix are catalytically active, but the agglomeration and migration of the Pt particles towards the substrate surface reduces the activity of the sensing layer. Magnetron sputtered epitaxial films from the Ti-Si-C and the Ti-Ge-C systems were grown on 4H-SiC substrates in order to explore their potential as high temperature stable ohmic contact materials to SiC based field effect gas sensors. Ti3SiC2 thin films deposited on 4H-SiC substrates were found to yield ohmic contacts to n-type SiC after a high temperature rapid thermal anneal at 950 ºC. Investigations on the growth mode of Ti3SiC2 thin films with varying Si content on 4H-SiC substrates showed the growth to be lateral step-flow with the propagation of steps with a height as small as half a unit cell. The amount of Si present during deposition leads to differences in surface faceting of the films and Si-supersaturation conditions gives growth of Ti3SiC2 films with the presence of TiSi2 crystallites. Current-voltage measurements of the as-deposited Ti3GeC2 films indicate that this material is also a promising candidate for achieving long term stable contact layers to 4H-SiC for operation at elevated temperatures in corrosive environments. Further investigations into the Ti-Ge-C system showed that the previously unreported solid solutions of (Ti,V)2GeC, (Ti,V)3GeC2 and (Ti,V)4GeC3 can be synthesized, and it was found that the growth of these films is affected by the nature of the substrate.

sted, utgiver, år, opplag, sider
Linköping: Linköping University Electronic Press, 2011. s. 61
Serie
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 1377
HSV kategori
Identifikatorer
urn:nbn:se:liu:diva-69641 (URN)9789173931403 (ISBN)
Disputas
2011-09-09, Planck, Fysikhuset, Campus Valla, Linköpings universitet, Linköping, 10:15 (engelsk)
Opponent
Veileder
Tilgjengelig fra: 2011-07-08 Laget: 2011-07-08 Sist oppdatert: 2019-12-19bibliografisk kontrollert

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