liu.seSök publikationer i DiVA
Ändra sökning
RefereraExporteraLänk till posten
Permanent länk

Direktlänk
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Annat format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annat språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Ohmic contact properties of magnetron sputtered Ti3SiC2 on n- and p-type 4H-silicon carbide
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad Fysik. Linköpings universitet, Tekniska högskolan.
Royal Institute of Technology.
Royal Institute of Technology.
Royal Institute of Technology.
Visa övriga samt affilieringar
2011 (Engelska)Ingår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 98, nr 4, s. 042108-Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

Epitaxial Ti3SiC2 (0001) thin film contacts were grown on doped 4H-SiC (0001) using magnetron sputtering in an ultra high vacuum system. The specific contact resistance was investigated using linear transmission line measurements. Rapid thermal annealing at 950 degrees C for 1 min of as-deposited films yielded ohmic contacts to n-type SiC with contact resistances in the order of 10(-4) Omega cm(2). Transmission electron microscopy shows that the interface between Ti3SiC2 and n-type SiC is atomically sharp with evidence of interfacial ordering after annealing.

Ort, förlag, år, upplaga, sidor
American Institute of Physics , 2011. Vol. 98, nr 4, s. 042108-
Nationell ämneskategori
Teknik och teknologier
Identifikatorer
URN: urn:nbn:se:liu:diva-67170DOI: 10.1063/1.3549198ISI: 000286676600025OAI: oai:DiVA.org:liu-67170DiVA, id: diva2:407781
Anmärkning

Original Publication: Kristina Buchholt, R Ghandi, M Domeij, C-M Zetterling, Jun Lu, Per Eklund, Lars Hultman and Anita Lloyd Spetz, Ohmic contact properties of magnetron sputtered Ti3SiC2 on n- and p-type 4H-silicon carbide, 2011, APPLIED PHYSICS LETTERS, (98), 4, 042108. http://dx.doi.org/10.1063/1.3549198 Copyright: American Institute of Physics http://www.aip.org/

Tillgänglig från: 2011-04-01 Skapad: 2011-04-01 Senast uppdaterad: 2017-12-11Bibliografiskt granskad
Ingår i avhandling
1. Nanostructured materials for gas sensing applications
Öppna denna publikation i ny flik eller fönster >>Nanostructured materials for gas sensing applications
2011 (Engelska)Doktorsavhandling, sammanläggning (Övrigt vetenskapligt)
Abstract [en]

In this Thesis I have investigated the use of nanostructured films as sensing and contact layers for field effect gas sensors in order to achieve high sensitivity, selectivity, and long term stability of the devices in corrosive environments at elevated temperatures. Electrochemically synthesized Pd and Au nanoparticles deposited as sensing layers on capacitive field effect devices were found to give a significant response to NOx with small, or no responses to H2, NH3, and C3H6. Pt nanoparticles incorporated in a TiC matrix are catalytically active, but the agglomeration and migration of the Pt particles towards the substrate surface reduces the activity of the sensing layer. Magnetron sputtered epitaxial films from the Ti-Si-C and the Ti-Ge-C systems were grown on 4H-SiC substrates in order to explore their potential as high temperature stable ohmic contact materials to SiC based field effect gas sensors. Ti3SiC2 thin films deposited on 4H-SiC substrates were found to yield ohmic contacts to n-type SiC after a high temperature rapid thermal anneal at 950 ºC. Investigations on the growth mode of Ti3SiC2 thin films with varying Si content on 4H-SiC substrates showed the growth to be lateral step-flow with the propagation of steps with a height as small as half a unit cell. The amount of Si present during deposition leads to differences in surface faceting of the films and Si-supersaturation conditions gives growth of Ti3SiC2 films with the presence of TiSi2 crystallites. Current-voltage measurements of the as-deposited Ti3GeC2 films indicate that this material is also a promising candidate for achieving long term stable contact layers to 4H-SiC for operation at elevated temperatures in corrosive environments. Further investigations into the Ti-Ge-C system showed that the previously unreported solid solutions of (Ti,V)2GeC, (Ti,V)3GeC2 and (Ti,V)4GeC3 can be synthesized, and it was found that the growth of these films is affected by the nature of the substrate.

Ort, förlag, år, upplaga, sidor
Linköping: Linköping University Electronic Press, 2011. s. 61
Serie
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 1377
Nationell ämneskategori
Naturvetenskap
Identifikatorer
urn:nbn:se:liu:diva-69641 (URN)9789173931403 (ISBN)
Disputation
2011-09-09, Planck, Fysikhuset, Campus Valla, Linköpings universitet, Linköping, 10:15 (Engelska)
Opponent
Handledare
Tillgänglig från: 2011-07-08 Skapad: 2011-07-08 Senast uppdaterad: 2017-12-14Bibliografiskt granskad

Open Access i DiVA

ApplPhysLett(527 kB)2486 nedladdningar
Filinformation
Filnamn FULLTEXT01.pdfFilstorlek 527 kBChecksumma SHA-512
860d72fdd7dd54733a69d87abd4793b4447e8809ffffa1ad1ea38f798bb4be32cbdc63a3a8b2fcef07d7455b676d0c453cfa30f23cc69651141dd5224e172f60
Typ fulltextMimetyp application/pdf

Övriga länkar

Förlagets fulltext

Personposter BETA

Buchholt, KristinaLu, JunEklund, PerHultman, LarsLloyd Spetz, Anita

Sök vidare i DiVA

Av författaren/redaktören
Buchholt, KristinaLu, JunEklund, PerHultman, LarsLloyd Spetz, Anita
Av organisationen
Tillämpad FysikTekniska högskolanTunnfilmsfysik
I samma tidskrift
Applied Physics Letters
Teknik och teknologier

Sök vidare utanför DiVA

GoogleGoogle Scholar
Totalt: 2486 nedladdningar
Antalet nedladdningar är summan av nedladdningar för alla fulltexter. Det kan inkludera t.ex tidigare versioner som nu inte längre är tillgängliga.

doi
urn-nbn

Altmetricpoäng

doi
urn-nbn
Totalt: 926 träffar
RefereraExporteraLänk till posten
Permanent länk

Direktlänk
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Annat format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annat språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf