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Step-flow growth of nanolaminate Ti3SiC2 epitaxial layers on 4H-SiC(0 0 0 1)
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad Fysik. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.ORCID-id: 0000-0003-1785-0864
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
Vise andre og tillknytning
2011 (engelsk)Inngår i: SCRIPTA MATERIALIA, ISSN 1359-6462, Vol. 64, nr 12, s. 1141-1144Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Epitaxial Ti3SiC2(0 0 0 1) films were deposited on 4 degrees off-cut 4H-SiC(0 0 0 1) wafers using magnetron sputtering. A lateral step-flow growth mechanism of the Ti3SiC2 was discovered by X-ray diffraction, elastic recoil detection analysis, atomic force microscopy and electron microscopy. Helium ion microscopy revealed contrast variations on the Ti3SiC2 terraces, suggesting a mixed Si and Ti(C) termination. Si-rich growth conditions results in Ti3SiC2 layers with pronounced {1 1 (2) over bar 0) faceting and off-oriented TiSi2 crystallites, while stoichiometric growth yields truncated {1 (1) over bar 0 0) terrace edges.

sted, utgiver, år, opplag, sider
Elsevier Science B.V., Amsterdam. , 2011. Vol. 64, nr 12, s. 1141-1144
Emneord [en]
Sputtering, Atomic force microscopy (AFM), Helium ion microscopy (HIM), Transmission electron microscopy (TEM), Crystal structure
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-68684DOI: 10.1016/j.scriptamat.2011.03.013ISI: 000290422300019OAI: oai:DiVA.org:liu-68684DiVA, id: diva2:419717
Merknad
Original Publication: Kristina Buchholt, Per Eklund, Jens Jensen, Jun Lu, Anita Lloyd Spetz and Lars Hultman, Step-flow growth of nanolaminate Ti3SiC2 epitaxial layers on 4H-SiC(0 0 0 1), 2011, SCRIPTA MATERIALIA, (64), 12, 1141-1144. http://dx.doi.org/10.1016/j.scriptamat.2011.03.013 Copyright: Elsevier Science B.V., Amsterdam. http://www.elsevier.com/ Tilgjengelig fra: 2011-05-27 Laget: 2011-05-27 Sist oppdatert: 2016-08-31
Inngår i avhandling
1. Nanostructured materials for gas sensing applications
Åpne denne publikasjonen i ny fane eller vindu >>Nanostructured materials for gas sensing applications
2011 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

In this Thesis I have investigated the use of nanostructured films as sensing and contact layers for field effect gas sensors in order to achieve high sensitivity, selectivity, and long term stability of the devices in corrosive environments at elevated temperatures. Electrochemically synthesized Pd and Au nanoparticles deposited as sensing layers on capacitive field effect devices were found to give a significant response to NOx with small, or no responses to H2, NH3, and C3H6. Pt nanoparticles incorporated in a TiC matrix are catalytically active, but the agglomeration and migration of the Pt particles towards the substrate surface reduces the activity of the sensing layer. Magnetron sputtered epitaxial films from the Ti-Si-C and the Ti-Ge-C systems were grown on 4H-SiC substrates in order to explore their potential as high temperature stable ohmic contact materials to SiC based field effect gas sensors. Ti3SiC2 thin films deposited on 4H-SiC substrates were found to yield ohmic contacts to n-type SiC after a high temperature rapid thermal anneal at 950 ºC. Investigations on the growth mode of Ti3SiC2 thin films with varying Si content on 4H-SiC substrates showed the growth to be lateral step-flow with the propagation of steps with a height as small as half a unit cell. The amount of Si present during deposition leads to differences in surface faceting of the films and Si-supersaturation conditions gives growth of Ti3SiC2 films with the presence of TiSi2 crystallites. Current-voltage measurements of the as-deposited Ti3GeC2 films indicate that this material is also a promising candidate for achieving long term stable contact layers to 4H-SiC for operation at elevated temperatures in corrosive environments. Further investigations into the Ti-Ge-C system showed that the previously unreported solid solutions of (Ti,V)2GeC, (Ti,V)3GeC2 and (Ti,V)4GeC3 can be synthesized, and it was found that the growth of these films is affected by the nature of the substrate.

sted, utgiver, år, opplag, sider
Linköping: Linköping University Electronic Press, 2011. s. 61
Serie
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 1377
HSV kategori
Identifikatorer
urn:nbn:se:liu:diva-69641 (URN)9789173931403 (ISBN)
Disputas
2011-09-09, Planck, Fysikhuset, Campus Valla, Linköpings universitet, Linköping, 10:15 (engelsk)
Opponent
Veileder
Tilgjengelig fra: 2011-07-08 Laget: 2011-07-08 Sist oppdatert: 2019-12-19bibliografisk kontrollert

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