liu.seSearch for publications in DiVA
Endre søk
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study
Linköpings universitet, Institutionen för fysik, kemi och biologi, Funktionella elektroniska material. Linköpings universitet, Tekniska högskolan.
Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, Ukraine .
Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, Ukraine .
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China .
Vise andre og tillknytning
2012 (engelsk)Inngår i: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 111, nr 023501Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Photoluminescence and optically detected magnetic resonance techniques are utilized to study defect properties of GaNP and GaNAs alloys subjected to post-growth hydrogenation by low-energy sub-threshold ion beam irradiation. It is found that in GaNP H incorporation leads to activation of new defects, which has a Ga interstitial (Ga-i) atom at its core and may also involve a H atom as a partner. The observed activation critically depends on the presence of N in the alloy, as it does not occur in GaP with a low level of N doping. In sharp contrast, in GaNAs hydrogen is found to efficiently passivate Ga-i-related defects present in the as-grown material. A possible mechanism responsible for the observed difference in the H behavior in GaNP and GaNAs is discussed.

sted, utgiver, år, opplag, sider
American Institute of Physics (AIP), 2012. Vol. 111, nr 023501
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-74675DOI: 10.1063/1.3676576ISI: 000299792400013OAI: oai:DiVA.org:liu-74675DiVA, id: diva2:490064
Merknad
funding agencies|Swedish Research Council| 621-2010-3815 |Swedish Institute||Tilgjengelig fra: 2012-02-03 Laget: 2012-02-03 Sist oppdatert: 2017-12-08

Open Access i DiVA

fulltext(1082 kB)338 nedlastinger
Filinformasjon
Fil FULLTEXT01.pdfFilstørrelse 1082 kBChecksum SHA-512
2516c77e8fe5d0245417f5d24af3e59ef621e42b9fdef0cc54c694dc822377fc6211098ccbc2ad3da5b0b0ec4d73e1f687a395b06097f213480d4cb39a47b304
Type fulltextMimetype application/pdf

Andre lenker

Forlagets fulltekst

Personposter BETA

Dagnelund, DanielChen, WeiminBuyanova, Irina

Søk i DiVA

Av forfatter/redaktør
Dagnelund, DanielChen, WeiminBuyanova, Irina
Av organisasjonen
I samme tidsskrift
Journal of Applied Physics

Søk utenfor DiVA

GoogleGoogle Scholar
Totalt: 338 nedlastinger
Antall nedlastinger er summen av alle nedlastinger av alle fulltekster. Det kan for eksempel være tidligere versjoner som er ikke lenger tilgjengelige

doi
urn-nbn

Altmetric

doi
urn-nbn
Totalt: 204 treff
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf