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Growth and characterization of epitaxial Ti3GeC2 thin films on 4H-SiC(0001)
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad Fysik. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.ORCID-id: 0000-0003-1785-0864
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
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2012 (Engelska)Ingår i: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 343, nr 1, s. 133-137Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

Epitaxial Ti3GeC2 thin films were deposited on 4 degrees off-cut 4H-SiC(0001) using magnetron sputtering from high purity Ti, C, and Ge targets. Scanning electron microscopy and helium ion microscopy show that the Ti3GeC2 films grow by lateral step-flow with {11 (2) over bar0} faceting on the SiC surface. Using elastic recoil detection analysis, atomic force microscopy, and X-Ray diffraction the films were found to be substoichiometric in Ge with the presence of small Ge particles at the surface of the film.

Ort, förlag, år, upplaga, sidor
Elsevier , 2012. Vol. 343, nr 1, s. 133-137
Nyckelord [en]
Surface structure, Atomic force microscopy, Helium ion microscopy, Physical vapor deposition processes, Titanium compound
Nationell ämneskategori
Teknik och teknologier
Identifikatorer
URN: urn:nbn:se:liu:diva-77103DOI: 10.1016/j.jcrysgro.2012.01.020ISI: 000302422300023OAI: oai:DiVA.org:liu-77103DiVA, id: diva2:524900
Anmärkning

Funding Agencies|VINN Excellence Center in Research and Innovation on Functional Nanoscale Materials (FunMat) by Swedish Governmental Agency for Innovation Systems (VINNOVA)||

The status of this article was previously Manuscript.

Tillgänglig från: 2012-05-04 Skapad: 2012-05-04 Senast uppdaterad: 2017-12-07
Ingår i avhandling
1. Nanostructured materials for gas sensing applications
Öppna denna publikation i ny flik eller fönster >>Nanostructured materials for gas sensing applications
2011 (Engelska)Doktorsavhandling, sammanläggning (Övrigt vetenskapligt)
Abstract [en]

In this Thesis I have investigated the use of nanostructured films as sensing and contact layers for field effect gas sensors in order to achieve high sensitivity, selectivity, and long term stability of the devices in corrosive environments at elevated temperatures. Electrochemically synthesized Pd and Au nanoparticles deposited as sensing layers on capacitive field effect devices were found to give a significant response to NOx with small, or no responses to H2, NH3, and C3H6. Pt nanoparticles incorporated in a TiC matrix are catalytically active, but the agglomeration and migration of the Pt particles towards the substrate surface reduces the activity of the sensing layer. Magnetron sputtered epitaxial films from the Ti-Si-C and the Ti-Ge-C systems were grown on 4H-SiC substrates in order to explore their potential as high temperature stable ohmic contact materials to SiC based field effect gas sensors. Ti3SiC2 thin films deposited on 4H-SiC substrates were found to yield ohmic contacts to n-type SiC after a high temperature rapid thermal anneal at 950 ºC. Investigations on the growth mode of Ti3SiC2 thin films with varying Si content on 4H-SiC substrates showed the growth to be lateral step-flow with the propagation of steps with a height as small as half a unit cell. The amount of Si present during deposition leads to differences in surface faceting of the films and Si-supersaturation conditions gives growth of Ti3SiC2 films with the presence of TiSi2 crystallites. Current-voltage measurements of the as-deposited Ti3GeC2 films indicate that this material is also a promising candidate for achieving long term stable contact layers to 4H-SiC for operation at elevated temperatures in corrosive environments. Further investigations into the Ti-Ge-C system showed that the previously unreported solid solutions of (Ti,V)2GeC, (Ti,V)3GeC2 and (Ti,V)4GeC3 can be synthesized, and it was found that the growth of these films is affected by the nature of the substrate.

Ort, förlag, år, upplaga, sidor
Linköping: Linköping University Electronic Press, 2011. s. 61
Serie
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 1377
Nationell ämneskategori
Naturvetenskap
Identifikatorer
urn:nbn:se:liu:diva-69641 (URN)9789173931403 (ISBN)
Disputation
2011-09-09, Planck, Fysikhuset, Campus Valla, Linköpings universitet, Linköping, 10:15 (Engelska)
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Handledare
Tillgänglig från: 2011-07-08 Skapad: 2011-07-08 Senast uppdaterad: 2017-12-14Bibliografiskt granskad

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Buchholt, KristinaEklund, PerJensen, JensLu, JunLloyd Spetz, AnitaHultman, Lars

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