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Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
Institute Tecnol and Nucl, Portugal .
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
Institute Tecnol and Nucl, Portugal .
Vise andre og tillknytning
2012 (engelsk)Inngår i: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, ISSN 1862-6300, Vol. 209, nr 1, s. 91-94Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

In this work, we present a comprehensive study on the hydrogen impurity depth profiles in InN films with polar c-plane and nonpolar a-plane surface orientations in relation to their structural and free-electron properties. We find that the as-grown nonpolar films exhibit generally higher bulk and near-surface H concentrations compared to the polar InN counter-parts. The latter may be partly associated with a change in the growth mode from 2D to 3D and a decrease in the grain size. Thermal annealing leads to a reduction of H concentrations and the intrinsic H levels are influenced by the structural characteristics of the films. The factors allowing reduction of bulk H and free electron concentrations in a-plane films are discussed.

sted, utgiver, år, opplag, sider
Wiley-VCH Verlag Berlin , 2012. Vol. 209, nr 1, s. 91-94
Emneord [en]
hydrogen, InN, nonpolar surfaces, unintentional doping
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-77548DOI: 10.1002/pssa.201100175ISI: 000303380700019OAI: oai:DiVA.org:liu-77548DiVA, id: diva2:528345
Merknad
Funding Agencies|FCT Portugal|PTDC/FIS/100448/2008|Swedish Research Council (VR)|2010-3848|Tilgjengelig fra: 2012-05-25 Laget: 2012-05-22 Sist oppdatert: 2012-05-25

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