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Band alignment studies in Si/Ge quantum dots based on optical and structural investigations
Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
Vise andre og tillknytning
(engelsk)Manuskript (preprint) (Annet vitenskapelig)
Abstract [en]

The present work is a photoluminescence study of Si-embedded Stranski-Krastanov Ge quantum dots. The value of the conduction band offset is a result of the magnitude of the tensile strain in the Si surrounding the compressive strained Ge dot. Due to the increased Si/Ge intermixing and reduced strain in the Si barrier, a reduction of the conduction band offset is observed at increased growth temperatures. The optical properties as derived from photoluminescence spectroscopy are correlated with structural properties obtained as a function of the growth temperature. High growth temperatures result in large Ge dots with low density due to the pronounced surface diffusion and Si/Ge intermixing. As confirmed by photoluminescence, the band gap of the Ge dots increases with increased growth temperature due to the higher degree of Si/Ge intermixing. The band alignment is of type-II in these structures, but the occurrence of both spatially indirect and spatially direct transitions are confirmed in temperature dependent photoluminescence measurements with varied excitation power conditions. An increasing temperature results in a gradual transition from the spatially indirect to the spatially direct recombination in the type-II band lineup, due to higher oscillator strength for the spatially direct transition combined with a higher population factor at higher temperatures.

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Identifikatorer
URN: urn:nbn:se:liu:diva-86206OAI: oai:DiVA.org:liu-86206DiVA, id: diva2:575706
Tilgjengelig fra: 2012-12-11 Laget: 2012-12-11 Sist oppdatert: 2012-12-11
Inngår i avhandling
1. Spectroscopy of semiconductor quantum dots
Åpne denne publikasjonen i ny fane eller vindu >>Spectroscopy of semiconductor quantum dots
2005 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

Quantum dots in the Si/Ge and InAs/GaAs materials systems are examined by means of photoluminescence. The spectroscopic study of Si/Ge quantum dots has demonstrated two different radiative recombination channels in the type II band alignment: The spatially direct transition inside the dot and the spatially indirect transition across the dot interface. Increased sample temperature results in a gradual transfer from the spatially indirect to the spatially direct recombination due to higher oscillator strength combined with the increased electron population inside the dot. In contrast to the spatially direct transition, the spatially indirect transition is shown to be sensitive to the carrier density due to the band bending at the Si/Ge interface. Due to an increased Si/Ge intermixing and hence reduced strain in the Si barrier, a reduction of the conduction band offset at increased growth temperatures is observed utilizing the different recombination channels as probes. The optical properties as derived from photoluminescence are correlated with the structural properties obtained by atomic force microscopy. Furthermore, by applying an electric field across the Si/Ge quantum dot structure, a reversed quantum confined Stark effect is demonstrated for the spatially indirect transition. By switching between the two different field directions, unique information on the growth related asymmetric strain profile derived at the through self-assembly of the quantum dots can be gained since corresponding information can not be obtained for type I systems.

The studies of the InAs/GaAs quantum dots show that external electric and magnetic fields alter the in-plane carrier transport to the dots. The results obtained from the micro-photoluminescence exciton spectra of a single dot demonstrate a redistribution of the excitonic lines when a lateral electric field is applied. This fact exhibits an effective charge reconfiguration of the dot from a purely negative charge state to a neutral state, demonstrating that the number of electrons and holes are controlled by the electric field. The model proposed to explain the charge redistribution is based on an effective hole localization at the potential fluctuations of the wetting layer at low temperatures and low fields. Furthermore, it is demonstrated that the quantum dot photoluminescence signal is considerably increased (up to a factor of 4) depending on the magnitude of the external electric field. The experimental results also show that the internal field is altered by an additional infrared illumination of the sample. An applied magnetic field perpendicular to the quantum dot layer at low temperatures is found to enhance the carrier localization in the wetting layer and accordingly reduce the quantum dot photoluminescence intensity. At higher temperatures (>100K), an enhanced photoluminescence intensity is instead observed due to increased capture, localization, and recombination rate of the carriers in the quantum dots.

sted, utgiver, år, opplag, sider
Linköping: Linköpings universitet, 2005. s. 65
Serie
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 976
HSV kategori
Identifikatorer
urn:nbn:se:liu:diva-31204 (URN)16952 (Lokal ID)91-85457-48-5 (ISBN)16952 (Arkivnummer)16952 (OAI)
Disputas
2005-11-18, Hörsal Planck, Fysikhuset, Campus Valla, Linköping, 10:15 (svensk)
Opponent
Tilgjengelig fra: 2009-10-09 Laget: 2009-10-09 Sist oppdatert: 2012-12-11

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