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Arc deposition of Ti–Si–C–N thin films from binary and ternary cathodes — Comparing sources of C
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
Vise andre og tillknytning
2012 (engelsk)Inngår i: Surface & Coatings Technology, ISSN 0257-8972, E-ISSN 1879-3347, Vol. 213, s. 145-154Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Ti–Si–C–N thin films with composition of 1–11 at.% Si and 1–20 at.% C have been deposited onto cemented carbide substrates by arcing Ti–Si cathodes in a CH4 + N2 gas mixture and, alternatively, through arcing Ti–Si–C cathodes in N2. Films of comparable compositions from the two types of cathodes have similar structure and properties. Hence, C can be supplied as either plasma ions generated from the cathode or atoms from the gas phase with small influence on the structural evolution. Over the compositional range obtained, the films were dense and cubic-phase nanocrystalline, as characterized by X-ray diffraction, ion beam analysis, and scanning and transmission electron microscopy. The films have high hardness (30–40 GPa by nanoindentation) due to hardening from low-angle grain boundaries on the nanometer scale and lattice defects such as growth-induced vacancies and alloying element interstitials.

sted, utgiver, år, opplag, sider
Elsevier, 2012. Vol. 213, s. 145-154
Emneord [en]
Cathodic arc deposition; Reactive deposition; Hard coatings; Compound cathodes; Ti–Si–C–N
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-86253DOI: 10.1016/j.surfcoat.2012.10.038ISI: 000314081200020OAI: oai:DiVA.org:liu-86253DiVA, id: diva2:576087
Tilgjengelig fra: 2012-12-12 Laget: 2012-12-12 Sist oppdatert: 2018-01-03bibliografisk kontrollert
Inngår i avhandling
1. Cathodic Arc Synthesis of Ti-Si-C-N Thin Films: Plasma Analysis and Microstructure Formation
Åpne denne publikasjonen i ny fane eller vindu >>Cathodic Arc Synthesis of Ti-Si-C-N Thin Films: Plasma Analysis and Microstructure Formation
2013 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

This Thesis explores the arc deposition process and films of Ti-Si-C-N, inspired by the two ternary systems Ti-Si-N and Ti-C-N, both successfully applied as corrosion and wear resistant films. The correlation between cathode, plasma, and film properties are studied for a comprehensive view on film formation. Novel approaches to adapt arc deposition to form multi-element films are investigated, concluding that the source of C is not a determining factor for film growth. Thus, cubic-phase films of similar properties can be synthesized from processes with either 1) ternary Ti-Si-C cathodes, including the Ti3SiC2 MAX phase, in N2 atmosphere or 2) Ti-Si cathodes in a mixture of N2 and CH4. With the Ti3SiC2 cathodes, superhard (45-50 GPa) cubic-phase (Ti,Si)(C,N) films can be deposited. The structure is nanocrystalline and feather-like, with high Si and C content of 12 and 16 at%, respectively. To isolate the effects of Si on film structure, magnetron sputtered Ti-Si-N films of comparatively low defect density was studied. These films show a strong preference for {200}  growth orientation, and can be grown as a single phase solid solution on MgO(001) substrates up to ~9 at% Si, i.e. considerably higher than the ~5 at% Si above which a feather-like nanocrystalline structure forms in arc deposited films. On (011) and (111) growth surfaces, the films self-organize into TiN columns separated by segregated crystalline-to-amorphous SiNx. The conditions for film growth by arc were investigated through plasma studies, showing that plasma properties are dependent on cathode composition as well as phase structure. Plasma generation from Ti-Si cathodes, with up to 25 at% Si, show higher average ion charge states of Ti and Si compared to plasma from elemental cathodes, which may be related to TiSix phases of higher cohesive energies. The ion energy distributions range up to 200 eV. Furthermore, compositional discrepancies between plasma ions and film infer significant contributions to film growth from Si rich neutral species. This is further supported by depositions with a macroparticle filter, intended for growth of films with low surface roughness, where Si and C contents lower than the stoichiometry of Ti3SiC2 cathodes was measured in both plasma and films. Also the substrate geometry is critical for the film composition in plasma based film deposition, as evidenced by the formation of artificial layering from rotating substrate fixtures common in high capacity arc deposition systems. The layers are characterized by modulations in composition and crystallinity, primarily attributed to preferential resputtering in high ion incidence angle segments repeated through rotation.

sted, utgiver, år, opplag, sider
Linköping: Linköping University Electronic Press, 2013. s. 55
Serie
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 1495
HSV kategori
Identifikatorer
urn:nbn:se:liu:diva-86259 (URN)978-91-7519-714-2 (ISBN)
Disputas
2013-01-14, Visionen, B-huset, Campus Valla, Linköpings universitet, Linköping, 10:15 (engelsk)
Opponent
Veileder
Tilgjengelig fra: 2012-12-12 Laget: 2012-12-12 Sist oppdatert: 2019-12-03bibliografisk kontrollert

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Eriksson, AndersGhafoor, NaureenJensen, JensNäslund, Lars-ÅkeJohansson, MatsOdén, MagnusHultman, LarsRosén, Johanna

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