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Gas sensitive field effect devices for high temperature
Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.ORCID-id: 0000-0002-2817-3574
Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
1995 (engelsk)Inngår i: Sensors and actuators. B, Chemical, ISSN 0925-4005, E-ISSN 1873-3077, Vol. 26, nr 1-3, s. 165-169Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Field effect sensors based on metal-oxide-silicon carbide (MOSiC) devices are used as high temperature gas sensors. They are sensitive to, for example, saturated hydrocarbons and hydrogen and can be operated up to at least 800 degrees C, which make them suitable for several types of combustion control. A metal gate with two layer platinum and a buffer layer of tantalum silicide in between gave a large increase in the long term stability of the sensors. At temperatures below 600 degrees C, the response to ethane in oxygen was shown to have a threshold at a ratio of about 0.38 for the ethane-to-oxygen concentrations. Below this ratio, the surface can be considered as mainly oxygen covered and the response is small. Above this ratio the metal surface is probably mainly hydrogen covered and the response is considerably larger.

sted, utgiver, år, opplag, sider
Elsevier, 1995. Vol. 26, nr 1-3, s. 165-169
Emneord [en]
Catalytic metal; MOS; Silicon carbide; Gas sensors; High temperature; Combustion control
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-88146DOI: 10.1016/0925-4005(94)01579-7ISI: A1995QW08300035OAI: oai:DiVA.org:liu-88146DiVA, id: diva2:602840
Tilgjengelig fra: 2013-02-04 Laget: 2013-01-30 Sist oppdatert: 2017-12-06

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