liu.seSearch for publications in DiVA
Endre søk
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Morphological and Optical Stability in Growth of Fluorescent SiC on Low Off-Axis Substrates
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
University of Erlangen-Nuremberg, Germany.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
University of Erlangen-Nuremberg, Germany.
Vise andre og tillknytning
2013 (engelsk)Inngår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 740-742, s. 19-22Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Fluorescent silicon carbide was grown using the fast sublimation growth process on low off-axis 6H-SiC substrates. In this case, the morphology of the epilayer and the incorporation of dopants are influenced by the Si/C ratio. Differently converted tantalum foils were introduced into the growth cell in order to change vapor phase stochiometry during the growth. Fluorescent SiC grown using fresh and fully converted tantalum foils contained morphological instabilities leading to lower room temperature photoluminescence intensity while an improved morphology and optical stability was achieved with partly converted tantalum foil. This work reflects the importance of considering the use of Ta foil in sublimation epitaxy regarding the morphological and optical stability in fluorescent silicon carbide.

sted, utgiver, år, opplag, sider
Trans Tech Publications Inc., 2013. Vol. 740-742, s. 19-22
Emneord [en]
Fluoresecnt Silicon Carbide, Low Off-Axis Substrates, Sublimation Epitaxy
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-88724DOI: 10.4028/www.scientific.net/MSF.740-742.19ISI: 000319785500005OAI: oai:DiVA.org:liu-88724DiVA, id: diva2:605690
Konferanse
9th European Conference on Silicon Carbide & Related Materials (ECSCRM 2012), 2-6 September 2012, Saint-Petersburg, Russia
Tilgjengelig fra: 2013-02-14 Laget: 2013-02-14 Sist oppdatert: 2017-12-06

Open Access i DiVA

Fulltekst mangler i DiVA

Andre lenker

Forlagets fulltekstLink to article

Personposter BETA

Jokubavicius, ValdasHens, PhilipLiljedahl, RickardYakimova, RositsaSyväjärvi, Mikael

Søk i DiVA

Av forfatter/redaktør
Jokubavicius, ValdasHens, PhilipLiljedahl, RickardYakimova, RositsaSyväjärvi, Mikael
Av organisasjonen
I samme tidsskrift
Materials Science Forum

Søk utenfor DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric

doi
urn-nbn
Totalt: 150 treff
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf