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The charged exciton in an InGaN quantum dot on a GaN pyramid
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
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2013 (Engelska)Ingår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 103, nr 1Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

The emission of a charged exciton in an InGaN quantum dot (QD) on top of a GaN pyramid is identified experimentally. The intensity of the charged exciton exhibits the expected competition with that of the single exciton, as observed in temperature-dependent micro-photoluminescence measurements, performed with different excitation energies. The non-zero charge state of this complex is further supported by time resolved micro-photoluminescence measurements, which excludes neutral alternatives of biexciton. The potential fluctuations in the vicinity of the QD that localizes the charge carriers are proposed to be responsible for the unequal supply of electrons and holes into the QD.

Ort, förlag, år, upplaga, sidor
American Institute of Physics (AIP) , 2013. Vol. 103, nr 1
Nationell ämneskategori
Teknik och teknologier
Identifikatorer
URN: urn:nbn:se:liu:diva-95961DOI: 10.1063/1.4812984ISI: 000321497200036OAI: oai:DiVA.org:liu-95961DiVA, id: diva2:641707
Anmärkning

Funding Agencies|NANO-N consortium||Swedish Foundation for Strategic Research (SSF)||

Tillgänglig från: 2013-08-19 Skapad: 2013-08-12 Senast uppdaterad: 2017-12-06
Ingår i avhandling
1. InGaN Quantum Dots Grown on GaN Pyramid Arrays
Öppna denna publikation i ny flik eller fönster >>InGaN Quantum Dots Grown on GaN Pyramid Arrays
2013 (Engelska)Doktorsavhandling, sammanläggning (Övrigt vetenskapligt)
Abstract [en]

Selective-area growth (SAG) of InGaN on GaN pyramids, which allows the formation of additional hybrid quantum structures, including quantum wires and quantum dots (QDs) in a site-controlled fashion, is attractive for both fundamental research and device application. The site-controlled growth of QDs showing sharp emission lines is seen as the first step toward the frontier quantum information application (QIA). Note that, in such case, one QD represents one device unless the challenge of fabricating identical QDs is overcome.

The concept of SAG GaN pyramids hosting InGaN QDs has been reported since 2000. However, the observation of sharp emission lines, which can be ascribed to three-dimensional carrier confinement in QDs, seems to be occasional.

The main outcome of this work is the investigation of the InGaN QDs grown on GaN hexagonal pyramids. This work covers the formation mechanism of InGaN QDs to the emission properties of individual InGaN QDs. A modified SAG approach to obtain InGaN QDs emitting photons with heralded polarization directions is also demonstrated. The inherent high polarization degree of photons emitted by InGaN QDs together with heralded polarization direction reveals a promising potential for the direct generation of linearly-polarized photons by site-controlled InGaN QDs.

Ort, förlag, år, upplaga, sidor
Linköping: Linköping University Electronic Press, 2013. s. 59
Serie
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 1534
Nationell ämneskategori
Naturvetenskap
Identifikatorer
urn:nbn:se:liu:diva-97412 (URN)978-91-7519-550-6 (ISBN)
Disputation
2013-09-05, Planck, Fysikhuset, Campus Valla, Linköpings universitet, Linköping, 10:15 (Engelska)
Opponent
Handledare
Tillgänglig från: 2013-09-12 Skapad: 2013-09-12 Senast uppdaterad: 2013-09-16Bibliografiskt granskad
2. Photoluminescence Characteristics of III-Nitride Quantum Dots and Films
Öppna denna publikation i ny flik eller fönster >>Photoluminescence Characteristics of III-Nitride Quantum Dots and Films
2017 (Engelska)Doktorsavhandling, sammanläggning (Övrigt vetenskapligt)
Abstract [en]

III-Nitride semiconductors are very promising in both electronics and optical devices. The ability of the III-Nitride semiconductors as light emitters to span the electromagnetic spectrum from deep ultraviolet light, through the entire visible region, and into the infrared part of the spectrum, is a very important feature, making this material very important in the field of light emitting devices. In fact, the blue emission from Indium Gallium Nitride (InGaN), which was awarded the 2014 Nobel Prize in Physics, is the basis of the common and important white light emitting diode (LED).

Quantum dots (QDs) have properties that make them very interesting for light emitting devices for a range of different applications, such as the possibility of increasing device efficiency. The spectrally well-defined emission from QDs also allows accurate color reproduction and high-performance communication devices. The small size of QDs, combined with selective area growth allows for an improved display resolution. By control of the polarization direction of QDs, they can be used in more efficient displays as well as in traditional communication devices. The possibility of sending out entangled photon pairs is another QD property of importance for quantum key distribution used for secure communication.

QDs can hold different exciton complexes, such as the neutral single exciton, consisting of one electron and one hole, and the biexciton, consisting of two excitons. The integrated PL intensity of the biexciton exhibits a quadratic dependence with respect to the excitation power, as compared to the linear power dependence of the neutral single exciton. The lifetime of the neutral exciton is 880 ps, whereas the biexciton, consisting of twice the number of charge carriers and lacks a dark state, has a considerably shorter lifetime of only 500 ps. The ratio of the lifetimes is an indication that the size of the QD is in the order of the exciton Bohr radius of the InGaN crystal making up these QDs in the InGaN QW.

A large part of the studies of this thesis has been focused on InGaN QDs on top of hexagonal Gallium Nitride (GaN) pyramids, selectively grown by Metal Organic Chemical Vapor Deposition (MOCVD). On top of the GaN pyramids, an InGaN layer and a GaN capping layer were grown. From structural and optical investigations, InGaN QDs have been characterized as growing on (0001) facets on truncated GaN pyramids. These QDs exhibit both narrow photoluminescence linewidths and are linearly polarized in directions following the symmetry of the pyramids.

In this work, the neutral single exciton, and the more rare negatively charged exciton, have been investigated. At low excitation power, the integrated intensity of the PL peak of the neutral exciton increases linearly with the excitation power. The negatively charged exciton, on the other hand, exhibits a quadratic power dependence, just like that of the biexciton. Upon increasing the temperature, the power dependence of the negatively charged exciton changes to linear, just like the neutral exciton. This change in power dependence is explained in terms of electrons in potential traps close to the QD escaping by thermal excitation, leading to a surplus of electrons in the vicinity of the QD. Consequently, only a single exciton needs to be created by photoexcitation in order to form a negatively charged exciton, while the extra electron is supplied to the QD by thermal excitation.

Upon a close inspection of the PL of the neutral exciton, a splitting of the peak of just below 0.4 meV is revealed. There is an observed competition in the integrated intensity between these two peaks, similar to that between an exciton and a biexciton. The high energy peak of this split exciton emission is explained in terms of a remotely charged exciton. This exciton state consists of a neutral single exciton in the QD with an extra electron or hole in close vicinity of the QD, which screens the built-in field in the QD.

The InGaN QDs are very small; estimated to be on the order of the exciton Bohr radius of the InGaN crystal, or even smaller. The lifetimes of the neutral exciton and the negatively charged exciton are approximately 320 ps and 130 ps, respectively. The ratio of the lifetimes supports the claim of the QD size being on the order of the exciton Bohr radius or smaller, as is further supported by power dependence results. Under the assumption of a spherical QD, theoretical calculations predict an emission energy shift of 0.7 meV, for a peak at 3.09 eV, due to the built-in field for a QD with a diameter of 1.3 nm, in agreement with the experimental observations.

Studying the InGaN QD PL from neutral and charged excitons at elevated temperatures (4 K to 166 K) has revealed that the QDs are surrounded by potential fluctuations that trap charge carriers with an energy of around 20 meV, to be compared with the exciton trapping energy in the QDs of approximately 50 meV. The confinement of electrons close to the QD is predicted to be smaller than for holes, which accounts for the negative charge of the charged exciton, and for the higher probability of capturing free electrons. We have estimated the lifetimes of free electrons and holes in the GaN barrier to be 45 ps and 60 ps, in consistence with excitons forming quickly in the barrier upon photoexcitation and that free electrons and holes get trapped quickly in local potential traps close to the QDs. This analysis also indicates that there is a probability of 35 % to have an electron in the QD between the photoexcitation pulses, in agreement with a lower than quadratic power dependence of the negatively charged exciton.

InN is an attractive material due to its infrared emission, for applications such as light emitters for communication purposes, but it is more difficult to grow with high quality and low doping concentration as compared to GaN. QDs with a higher In-composition or even pure InN is an interesting prospect as being a route towards increased quantum confinement and room temperature device operation. For all optical devices, p-type doping is needed. Even nominally undoped InN samples tend to be heavily n-type doped, causing problems to make pn-junctions as needed for LEDs. In our work, we present Mg-doped p-type InN films, which when further increasing the Mg-concentration revert to n-type conductivity. We have focused on the effect of the Mg-doping on the light emission properties of these films. The low Mg doped InN film is inhomogeneous and is observed to contain areas with n-type conductivity, so called n-type pockets in the otherwise p-type InN film. A higher concentration of Mg results in a higher crystalline quality and the disappearance of the n-type pockets. The high crystalline quality has enabled us to determine the binding energy of the Mg dopants to 64 meV. Upon further increase of the Mg concentration, the film reverts to ntype conductivity. The highly Mg doped sample also exhibits a red-shifted emission with features that are interpreted as originating from Zinc-Blende inclusions in the Wurtzite InN crystal, acting as quantum wells. The Mg doping is an important factor in controlling the conductivity of InN, as well as its light emission properties, and ultimately construct InN-based devices.

In summary, in this thesis, both pyramidal InGaN QDs and InGaN QDs in a QW have been investigated. Novel discoveries of exciton complexes in these QD systems have been reported. Knowledge has also been gained about the challenging material InN, including a study of the effect of the Mg-doping concentration on the semiconductor crystalline quality and its light emission properties. The outcome of this thesis enriches the knowledge of the III-Nitride semiconductor community, with the long-term objective to improve the device performance of III-Nitride based light emitting devices.

Ort, förlag, år, upplaga, sidor
Linköping: Linköping University Electronic Press, 2017. s. 45
Serie
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 1867
Nationell ämneskategori
Den kondenserade materiens fysik Atom- och molekylfysik och optik Annan fysik Teoretisk kemi Materialkemi
Identifikatorer
urn:nbn:se:liu:diva-139766 (URN)10.3384/diss.diva-139766 (DOI)978-91-7685-487-7 (ISBN)
Disputation
2017-09-04, Planck, Fysikhuset, Campus Valla, Linköping, 10:15 (Engelska)
Opponent
Handledare
Tillgänglig från: 2017-08-15 Skapad: 2017-08-15 Senast uppdaterad: 2019-10-11Bibliografiskt granskad

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