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Direct current magnetron sputtered ZrB2 thin films on 4H-SiC(0001) and Si(100)
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
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2014 (Engelska)Ingår i: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 550, s. 285-290Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

ZrB2 thin films have been synthesized using direct current magnetron sputtering from a ZrB2 compound target onto 4H-SiC(0001) and Si(100) substrates kept at different temperatures (no heating, 400 °C, and 550 °C), and substrate bias voltage (-20 V to -80 V). Time-of-flight energy elastic recoil detection analysis shows that all the films are near stoichiometric and have a low degree of contaminants, with O being the most abundant (< 1 at.%). The films are crystalline, and their crystallographic orientation changes from 0001 to a more random orientation with increased deposition temperature. X-ray diffraction pole figures and selected area electron diffraction patterns of the films deposited without heating reveal a fiber-texture growth. Four point probe measurements show typical resistivity values of the films ranging from ~95 to 200 μΩcm, decreasing with increased growth temperature and substrate bias.

Ort, förlag, år, upplaga, sidor
2014. Vol. 550, s. 285-290
Nyckelord [en]
Zirconium diboride; Silicon carbide; Thin films; Compound target; Industrial scale deposition system; Crystalline films
Nationell ämneskategori
Naturvetenskap
Identifikatorer
URN: urn:nbn:se:liu:diva-99942DOI: 10.1016/j.tsf.2013.11.040ISI: 000328499700045OAI: oai:DiVA.org:liu-99942DiVA, id: diva2:658959
Tillgänglig från: 2013-10-23 Skapad: 2013-10-23 Senast uppdaterad: 2019-12-02Bibliografiskt granskad
Ingår i avhandling
1. Growth and Characterization of ZrB2 Thin Films
Öppna denna publikation i ny flik eller fönster >>Growth and Characterization of ZrB2 Thin Films
2013 (Engelska)Licentiatavhandling, sammanläggning (Övrigt vetenskapligt)
Abstract [en]

In this thesis, growth of ZrB2 thin films by direct current magnetron sputtering is investigatedusing a high vacuum industrial scale deposition system and an ultra-high vacuum laboratory scalesystem. The films were grown from ZrB2 compound targets at temperatures ranging from ambient (without external heating) to 900 °C and with substrate biases from -20 to -120 V. Short deposition times of typically 100 or 300 s and high growth rates of 80-180 nm/min were emphasized to yield films with thicknesses of 300-400 nm. The films were characterized by thinfilm X-ray diffraction with the techniques θ/2θ and ω scans, pole figure measurements andreciprocal space mapping, scanning and transmission electron microscopy, elastic recoil detection analysis and four point probe measurements. The substrates applied were Si(100), Si(111),4H-SiC(0001) and GaN(0001) epilayers grown on 4H-SiC. The Si(111), 4H-SiC(0001) substrates and GaN(0001) epilayers were chosen given their small lattice mismatches to ZrB2 making them suitable for epitaxial growth.The films deposited in the industrial system were found to be close to stoichiometric with a low degree of contaminants, with O being the most abundant at a level of < 1 at.%. Furthermore, the structure of the films is temperature dependent as films deposited in this system without external heating are fiber textured with a 0001-orientation while the films deposited at 550 °C exhibitrandom orientation. In contrast, epitaxial growth was demonstrated in the laboratory scale system on etched 4H-SiC(0001) and Si(111) deposited at 900 °C following outgassing of the substrates at 300 °C and in-situ heat treatment at the applied growth temperature to remove the native oxides. However, films grown on GaN(0001) were found to be 0001 textured at the applied deposition conditions, which make further studies necessary to enable epitaxial growth on this substrate material. Four point probe measurements on the films deposited in the industrial system show typical resistivity values ranging from ˜95 to 200 μΩcm with a trend to lower values for the films deposited at higher temperatures and at higher substrate bias voltages.

Ort, förlag, år, upplaga, sidor
Linköping: Linköping University Electronic Press, 2013. s. 53
Serie
Linköping Studies in Science and Technology. Thesis, ISSN 0280-7971 ; 1614
Nyckelord
Zirconium diboride (ZrB2), Thin film, Magnetron sputtering, Epitaxi, Silicon carbide (SiC)
Nationell ämneskategori
Teknik och teknologier
Identifikatorer
urn:nbn:se:liu:diva-98308 (URN)10.3384/lic.diva-98308 (DOI)LIU-TEK-LIC-2013:48 (Lokalt ID)978-91-7519-532-2 (ISBN)LIU-TEK-LIC-2013:48 (Arkivnummer)LIU-TEK-LIC-2013:48 (OAI)
Presentation
2013-11-08, Planck, Fysikhuset, Campus Valla, Linköpings Universitet, Linköping, 10:15 (Engelska)
Opponent
Handledare
Forskningsfinansiär
Vetenskapsrådet
Tillgänglig från: 2013-10-23 Skapad: 2013-10-08 Senast uppdaterad: 2019-12-08Bibliografiskt granskad
2. ZrB2 Thin Films: Growth and Characterization
Öppna denna publikation i ny flik eller fönster >>ZrB2 Thin Films: Growth and Characterization
2016 (Engelska)Doktorsavhandling, sammanläggning (Övrigt vetenskapligt)
Abstract [en]

Zirconium diboride, ZrB2, is a ceramic material with bulk properties such as high melting point (3245 °C), high hardness (23 GPa), and low resistivity (~8 μΩcm). Thin film growth of ZrB2 using physical vapor deposition has suffered from problems with films deviating from stoichiometry and with high levels of contaminants, especially high oxygen content. The homogeneity range of ZrB2 is very narrow, and consequently it is vital to achieve the correct stoichiometry to grow films with high crystalline order.

This thesis describes a direct current magnetron sputtering process to grow stoichiometric ZrB2 thin films with a low degree of impurities. Growth of epitaxial ZrB2 films was achieved on 4H-SiC(0001), Si(111) and Al2O3(0001) substrates. The effect of deposition temperature and power applied on the sputtering target was investigated and showed that high power density (8.77 Wcm-2) and high temperature (900 °C) resulted in films with the best composition and the highest crystal quality. ZrB2 films on GaN(0001) templates exhibit an amorphous layer at the film-substrate interface and the resulting films are either polycrystalline or textured.

Resistivity measurements showed that the ZrB2 thin films exhibit typical resistivity values of ~100-250 μΩcm and that the resistivity decreased with increasing deposition temperature.

Nanoindentation was applied to assess the mechanical properties of the films. The epitaxial ZrB2 films exhibit high elastic recovery and a hardness of ~45-50 GPa, twice as high as the literature bulk value. In addition, evaluation of the mechanical properties was performed at high temperatures of up to 600 °C and showed that the epitaxial films retained a higher hardness, compared to textured ZrB2 films and bulk, also at these temperatures.

Ort, förlag, år, upplaga, sidor
Linköping: Linköping University Electronic Press, 2016. s. 67
Serie
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 1744
Nationell ämneskategori
Fysik
Identifikatorer
urn:nbn:se:liu:diva-128614 (URN)10.3384/diss.diva-128614 (DOI)978-91-7685-833-2 (ISBN)
Disputation
2016-06-17, Planck, Fysikhuset, Campus Valla, Linköping, 09:15 (Engelska)
Opponent
Handledare
Tillgänglig från: 2016-05-25 Skapad: 2016-05-25 Senast uppdaterad: 2019-10-29Bibliografiskt granskad

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