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Silicon carbide detector for laser-generated plasma radiation
Politecnico di Milano, Como Campus, Italy. (Department of Electronic Engineering and Information Science)
Politecnico di Milano, Como Campus, Italy. (Department of Electronic Engineering and Information Science)
University of Messina, Italy. (Department of Physics)
Selex Sistemi Integrati S.p.A., Rome, Italy.
2013 (Engelska)Ingår i: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 272, s. 128-131Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

We present the performance of a Silicon Carbide (SiC) detector in the acquisition of the radiation emittedby laser generated plasmas. The detector has been employed in time of flight (TOF) configuration withinan experiment performed at the Prague Asterix Laser System (PALS). The detector is a 5 mm2 area 100 nmthick circular Ni SiC Schottky junction on a high purity 4H-SiC epitaxial layer 115 μm thick. Currentsignals from the detector with amplitudes up to 1.6 A have been measured, achieving voltage signals over 80 V on a 50 Ω load resistance with excellent signal to noise ratios. Resolution of few nanoseconds hasbeen experimentally demonstrated in TOF measurements. The detector has operated at 250 V DC biasunder extreme operating conditions with no observable performance degradation.

Ort, förlag, år, upplaga, sidor
Elsevier, 2013. Vol. 272, s. 128-131
Nyckelord [en]
Semiconductor radiation detectors, Silicon carbide, Laser, Plasma, Radiation spectroscopy
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Fysik
Identifikatorer
URN: urn:nbn:se:liu:diva-109915DOI: 10.1016/j.apsusc.2012.03.183OAI: oai:DiVA.org:liu-109915DiVA, id: diva2:741609
Konferens
5th Workshop on Plasma Production by Laser Ablation (PPLA2011)
Anmärkning

This research has been supported by the Italian National Institute of Nuclear Physics (INFN) under LIANA experiment and by Laser-LabEurope (Project No.: pals 001653).

Tillgänglig från: 2014-08-28 Skapad: 2014-08-28 Senast uppdaterad: 2017-12-05Bibliografiskt granskad

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Puglisi, Donatella

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