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Layer-number determination in graphene on SiC by reflectance mapping
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
Lund University, Sweden .
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2014 (engelsk)Inngår i: Carbon, ISSN 0008-6223, E-ISSN 1873-3891, Vol. 77, s. 492-500Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

We report a simple, handy and affordable optical approach for precise number-of-layers determination of graphene on SiC based on monitoring the power of the laser beam reflected from the sample (reflectance mapping) in a slightly modified micro-Raman setup. Reflectance mapping is compatible with simultaneous Raman mapping. We find experimentally that the reflectance of graphene on SiC normalized to the reflectivity of bare substrate (the contrast) increases linearly with similar to 1.7% per layer for up to 12 layers, in agreement with theory The wavelength dependence of the contrast in the visible is investigated using the concept of ideal fermions and compared with existing experimental data for the optical constants of graphene. We argue also that the observed contrast is insensitive to the doping condition of the sample, as well as to the type of sample (graphene on C- or Si-face of 4H or 6H SiC, hydrogen-intercalated graphene). The possibility to extend the precise layer counting to similar to 50 layers makes reflectivity mapping superior to low-energy electron microscopy (limited to similar to 10 layers) in quantitative evaluation of graphene on the C-face of SiC. The method is applicable for graphene on other insulating or semiconducting substrates.

sted, utgiver, år, opplag, sider
Elsevier, 2014. Vol. 77, s. 492-500
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Identifikatorer
URN: urn:nbn:se:liu:diva-110689DOI: 10.1016/j.carbon.2014.05.054ISI: 000340689400054OAI: oai:DiVA.org:liu-110689DiVA, id: diva2:749471
Merknad

Funding Agencies|GRAPHIC-RF project within the EuroGRAPHENE program of the European Science Foundation (ESF); EPIGRAT project within the EuroGRAPHENE program of the European Science Foundation (ESF)

Tilgjengelig fra: 2014-09-24 Laget: 2014-09-19 Sist oppdatert: 2017-12-05

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Layer-number determination in graphene on SiC by reflectance mapping(1234 kB)839 nedlastinger
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Ivanov, Ivan GueorguievUl Hassan, JawadIakimov, TihomirYakimova, RositsaJanzén, Erik

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Ivanov, Ivan GueorguievUl Hassan, JawadIakimov, TihomirYakimova, RositsaJanzén, Erik
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