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Deterministic Single InGaN Quantum Dots grown on GaN Micro-Pyramid Arrays
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.ORCID-id: 0000-0002-4547-6673
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2013 (Engelska)Ingår i: Advanced Materials Research, ISSN 1022-6680, E-ISSN 1662-8985, Vol. 646, s. 34-37Artikel i tidskrift (Övrigt vetenskapligt) Published
Abstract [en]

InGaN quantum dots (QDs) formed on top of GaN pyramids have been fabricated by means of selective area growth employing hot wall MOCVD. Upon regrowth of a patterned substrate, the growth will solely occur in the holes, which evolve into epitaxially grown wurtzite based pyramids. These pyramids are subsequently overgrown by a thin optically active InGaN well. The QDs are preferably nucleating at the apices of the pyramids as evidenced by the transmission electron microscopy (TEM). The emission from these QDs have been monitored by means of microphotoluminescence (µPL), in which single emission lines have been detected with a sub-meV line width. The µPL measurements undoubtedly reveal that the QDs are located in the apexes of the pyramids, since the sharp emission peaks can only be monitored as the excitation laser is focused on the apices in the µPL. It is also demonstrated that the emission energy can be changed in a controlled way by altering the growth conditions, like the growth temperature and/or composition, for the InGaN layers. The tip of the GaN pyramid is on the nm scale and can be made sharp or slightly truncated. TEM analysis combined with µPL results strongly indicate that the Stranski-Krastanow growth modepreferably is taking place at the microscopic c-plane truncation of the GaN pyramid. Single emission lines with a high degree of polarization is a common feature observed for individual QDs. This emission remains unchanged with increasing the excitation power and sample temperature. An in-plane elongated QD forming a shallow potential with an equal number of electrons and holes is proposed to explain the observed characteristics of merely a single exciton emission with a high degree of polarization.

Ort, förlag, år, upplaga, sidor
Trans Tech Publications Inc., 2013. Vol. 646, s. 34-37
Nyckelord [en]
Quantum dots, Pyramid, Exciton, Photoluminescence
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Kemi
Identifikatorer
URN: urn:nbn:se:liu:diva-111502DOI: 10.4028/www.scientific.net/AMR.646.34OAI: oai:DiVA.org:liu-111502DiVA, id: diva2:756868
Konferens
2012 International Conference on Nano Materials and Electric Devices (ICNMED 2012), 19-20 December 2012, Hong Kong
Tillgänglig från: 2014-10-20 Skapad: 2014-10-20 Senast uppdaterad: 2017-12-05Bibliografiskt granskad

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Holtz, Per OlofHsu, Chi-WeiLundskog, AndersKarlsson, K. FredrikForsberg, UrbanJanzén, Erik

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Holtz, Per OlofHsu, Chi-WeiLundskog, AndersKarlsson, K. FredrikForsberg, UrbanJanzén, Erik
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HalvledarmaterialTekniska högskolan
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