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Single-step synthesis process of Ti3SiC2 ohmic contacts on 4H-SiC by sputter-deposition of Ti
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad sensorvetenskap. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad sensorvetenskap. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad sensorvetenskap. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
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2015 (Engelska)Ingår i: Scripta Materialia, ISSN 1359-6462, E-ISSN 1872-8456, Vol. 99, s. 53-56Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

We report a single-step procedure for growth of ohmic Ti3SiC2 on 4H-SiC by sputter-deposition of Ti at 960 °C, based on the Ti–SiC solid-state reaction during deposition. X-ray diffraction and electron microscopy show the growth of interfacial Ti3SiC2. The as-deposited contacts are ohmic, in contrast to multistep processes with deposition followed by rapid thermal annealing. This procedure also offers the possibility of direct synthesis of oxygen-barrier capping layers before exposure to air, potentially improving contact stability in high-temperature and high-power devices.

Ort, förlag, år, upplaga, sidor
Elsevier, 2015. Vol. 99, s. 53-56
Nyckelord [en]
Silicon carbide, MAX phase, Physical vapor deposition, High temperature
Nationell ämneskategori
Fysik
Identifikatorer
URN: urn:nbn:se:liu:diva-113760DOI: 10.1016/j.scriptamat.2014.11.025ISI: 000348881100014OAI: oai:DiVA.org:liu-113760DiVA, id: diva2:784564
Anmärkning

We acknowledge the support from the VINN Excellence Center in research and innovation on Functional Nanoscale Materials (FunMat) by the Swedish Governmental Agency for Innovation Systems. P.E and J.L. also acknowledge support from the Swedish Foundation for Strategic Research through the Future Research Leaders 5 program and the Synergy Grant FUNCASE, Functional Carbides and Advanced Surface Engineering. In addition, we thank Dr. Hans Hogberg, Dr. Arni Sigurdur Ingason and Dr. Fredrik Eriksson for discussions and help with experiments.

Tillgänglig från: 2015-01-30 Skapad: 2015-01-30 Senast uppdaterad: 2017-12-05Bibliografiskt granskad
Ingår i avhandling
1. Functional Nanostructures for Gas Sensors
Öppna denna publikation i ny flik eller fönster >>Functional Nanostructures for Gas Sensors
2015 (Engelska)Licentiatavhandling, sammanläggning (Övrigt vetenskapligt)
Abstract [en]

This research focuses on three main topics within the aims of FUNMAT, which are:

  1. Ohmic contacts to high-temperature chemical gas sensors.
  2. Studies of catalytic monolayers on active gate metal in SiC-based gas sensors.
  3. Investigating potential sensing properties of the nanoscale material MXene.

Within the first research topic, we study the growth of Ohmic contacts to 4H-SiC for high temperature and corrosive environment applications, being a need in chemical gas sensors e.g. for automotive industry. For this purpose, common commercially-synthesized contacts are not suitable, due to either the presence of low-melting point elements or rapid oxidation. Improving the previously reported growth methods, designing durable oxygen-barrier capping layers, and synthesizing new contact-materials are our main focuses.

For the second research topic, we investigate the improvement of the sensing performance of platinum-based sensing layers in silicon carbide field-effect gas sensors, which have many industrial applications. This project started with modification of field-effect-based metal oxide semiconductor CO sensors by the synthesis of one monolayer iron oxide on the platinum sensing layers of the sensors. Monolayer metal oxides have been reported to enhance the catalytic properties of platinum which is a promising result to be used in improving the performance of gas sensors.

And finally, the third research topic covers studies of newly synthesized materials to be explored for any potential sensing property. Our focus is on metal carbide nano-sheets known as MXene phases and to study their  gas adsorption properties. Due to several uninvestigated features of newly synthesized materials, ab.initio. theoretical studies are of importance.

Ort, förlag, år, upplaga, sidor
Linköping: Linköping University Electronic Press, 2015. s. 52
Serie
Linköping Studies in Science and Technology. Thesis, ISSN 0280-7971 ; 1705
Nationell ämneskategori
Fysik
Identifikatorer
urn:nbn:se:liu:diva-113763 (URN)978-91-7519-133-1 (ISBN)
Presentation
2015-02-20, Planck, Fysikhuset, Campus Valla, Linköpings universitet, Linköping, 10:15 (Engelska)
Opponent
Handledare
Tillgänglig från: 2015-01-30 Skapad: 2015-01-30 Senast uppdaterad: 2015-01-30Bibliografiskt granskad
2. Novel Layered and 2D Materials for Functionality Enhancement of Contacts and Gas Sensors
Öppna denna publikation i ny flik eller fönster >>Novel Layered and 2D Materials for Functionality Enhancement of Contacts and Gas Sensors
2016 (Engelska)Doktorsavhandling, sammanläggning (Övrigt vetenskapligt)
Abstract [en]

Chemical gas sensors are widely-used electronic devices for detecting or measuring the density levels of desired gas species. In this study, materials with established or potential applications for gas sensors are treated. For the case of high-temperature applications (≈ 600 °C), semiconductor-based gas sensors suffer from rapid oxidation of the metallic ohmic contacts, the same cause-of-failure as for the general case of high-temperature semiconductor electronics. 4H-SiC is an ideal semiconductor for high-temperature applications. Ti3SiC2 is a known ohmic contact to 4H-SiC with the known two-step synthesis process of post-annealing of pre-deposited Ti/Al multilayers or sputter-deposition of Ti3SiC2 films at > 900 °C. Here, sputter-deposition of Ti on 4H-SiC at > 900 °C is presented as a novel single-step method for the synthesis of Ti3SiC2 ohmic contacts, based on a concurrent reaction between sputter-deposited Ti and 4HSiC. Ti3SiC2, similar to any other known ohmic contact, degrade rapidly in high-temperature oxidizing ambient. To try to overcome this obstacle, noble metal diffusion into Ti3SiC2 has been s studied with the goal to retain ohmic properties of Ti3SiC2 and harnessing oxidation resistivity of noble metals. A novel exchange intercalation between Ti3SiC2 and Au is discovered which results in the almost complete exchange of Si with Au giving rise to novel Ti3AuC2 and Ti3Au2C2. Ti3IrC2 is also synthesized through exchange intercalation of Ir into Ti3Au2C2. All the aforementioned phases showed ohmic properties to 4H-SiC. This technique is also studied based on Ti2AlC and Ti3AlC2 resulting in the synthesis of novel Ti2Au2C and Ti3Au2C2, respectively. Using Ti3AuC2 and an Au/IrOx capping layer, an ohmic contact was manufactured, which maintained ohmic properties and showed no structural defects after 1000 h of aging at 600 °C air.

Ti3SiC2 is a member of a large family of materials known as Mn+1AXn phases. While exchange reactions of Si (or Al) planes in Ti3SiC2 (Ti2AlC and Ti3AlC2) is presented here, a world-wide research already exists on chemical removal of the same atomic planes from different Mn+1AXn phases and the synthesis of Mn+1Xn sheets known as MXenes. I performed a theoretical study regarding simulation of electronic and structural properties of more than120 different possible MXene phases. The results show that some MXene phases, when terminated by particular gas species, turn into Dirac materials. That is, they possess massless Dirac fermions with different properties compared to graphene such as higher number of Dirac points at the Fermi level, giant spin orbit splitting, and preserved 2D-type electronic properties by extending the dimensionality. The general substantial change of the electronic properties of MXenes under different gas adsorption configurations stands out and can thus be harnessed for sensing applications.

Growth of monolayer iron oxide on porous Pt sensing layers is another novel approach used in this study for applying the unique properties of 2D materials for gas sensors. A low temperature shift in CO oxidation characteristics is presented. The approach is similar to that previously reported using bulk single crystal Pt substrate, the latter being an unrealistic model for sensors and catalysts. Monolayer-coated Pt sensing layers were fabricated as the metal component of a metal oxide semiconductor (MOS) capacitor device, whereby the electrical response of the MOS device could be used to map out the catalytic properties of the sensing layer. The monolayer-coated Pt surface showed to be stable with retained improved catalytic properties for > 200 h. The MOS device measurements are here utilized as a handy method for in-situ monitoring of the surface chemical properties of the monolayer-coated Pt and the approach is highly functional for use and characterization of monolayer coatings of widely used sensingor catalytic layers.

Ort, förlag, år, upplaga, sidor
Linköping: Linköping University Electronic Press, 2016. s. 55
Serie
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 1784
Nationell ämneskategori
Fysik Materialkemi Den kondenserade materiens fysik Oorganisk kemi Annan kemiteknik Annan materialteknik
Identifikatorer
urn:nbn:se:liu:diva-131474 (URN)10.3384/diss.diva-131474 (DOI)9789176856994 (ISBN)
Disputation
2016-10-21, Plank, Fysikhuset, Campus Valla, Linköping, 10:15 (Engelska)
Opponent
Handledare
Tillgänglig från: 2016-09-22 Skapad: 2016-09-22 Senast uppdaterad: 2019-10-29Bibliografiskt granskad

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