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Growth optimization of AlGaN/GaN HEMT structure on 100 mm SiC substrate: Utilizing bottom-to-top approach
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.ORCID-id: 0000-0001-9140-6724
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(Engelska)Manuskript (preprint) (Övrigt vetenskapligt)
Abstract [en]

The structure of high electron mobility transistors (HEMTs) based on group-III nitride materials generally consists of three important blocks; a nucleation layer, a semi-insulating (SI) GaN buffer layer, and active layers. In this work, we present an overall growth optimization, which leads to superior crystalline quality and ultra-low thermal boundary resistance (TBR) of a 35-nm AlN nucleation layer, excellent crystalline quality of carbon-doped GaN buffer layer, and high mobility (> 2000 cm2/Vs) of two-dimensional gas (2DEG) in a simple AlGaN/GaN heterostructure grown on a SI SiC substrate.

Nationell ämneskategori
Fysik
Identifikatorer
URN: urn:nbn:se:liu:diva-117134OAI: oai:DiVA.org:liu-117134DiVA, id: diva2:805916
Tillgänglig från: 2015-04-17 Skapad: 2015-04-17 Senast uppdaterad: 2015-04-17Bibliografiskt granskad
Ingår i avhandling
1. MOCVD growth of GaN-based high electron mobility transistor structures
Öppna denna publikation i ny flik eller fönster >>MOCVD growth of GaN-based high electron mobility transistor structures
2015 (Engelska)Doktorsavhandling, sammanläggning (Övrigt vetenskapligt)
Abstract [en]

The present work was to improve the overall quality of GaN-based high electron mobility transistor (HEMT) epitaxial structures grown on semi-insulating (SI) SiC and native GaN substrates, using an approach called bottom-to-top optimization. The bottom-to-top optimization means an entire growth process optimization, from in-situ substrate pretreatment to the epitaxial growth and then the cooling process. Great effort was put to gain the understanding of the influence of growth parameters on material properties and consequently to establish an advanced and reproducible growth process. Many state-of-the-art material properties of GaN-based HEMT structures were achieved in this work, including superior structural integrity of AlN nucleation layers for ultra-low thermal boundary resistance, excellent control of residual impurities, outstanding and nearly-perfect crystalline quality of GaN epilayers grown on SiC and native GaN substrates, respectively, and record-high room temperature 2DEG mobility obtained in simple AlGaN/GaN heterostructures.

The epitaxial growth of the wide bandgap III-nitride epilayers like GaN, AlN,  AlGaN, and InAlN, as well as various GaN-based HEMT structures was all carried out in a hot-wall metalorganic chemical vapor deposition (MOCVD) system. A variety of structural and electrical characterizations were routinely used to provide fast feedback for adjusting growth parameters and developing improved growth processes.

Ort, förlag, år, upplaga, sidor
Linköping: Linköping University Electronic Press, 2015. s. 59
Serie
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 1662
Nationell ämneskategori
Fysik
Identifikatorer
urn:nbn:se:liu:diva-117138 (URN)10.3384/diss.diva-117138 (DOI)978-91-7519-073-0 (ISBN)
Disputation
2015-05-12, Planck, Fysikhuset, Campus Valla, Linköping, 10:15 (Engelska)
Opponent
Handledare
Tillgänglig från: 2015-04-17 Skapad: 2015-04-17 Senast uppdaterad: 2019-11-15Bibliografiskt granskad

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Chen, Jr-TaiForsberg, UrbanPersson, IngemarPersson, PerKordina, OlleJanzén, Erik

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Chen, Jr-TaiForsberg, UrbanPersson, IngemarPersson, PerKordina, OlleJanzén, Erik
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