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Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer
Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, Sweden.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, Sweden.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
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2015 (Engelska)Ingår i: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 62, nr 7, s. 2162-2169Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

Aluminium gallium nitride (AlGaN)/GaN high-electron mobility transistor performance is to a large extent affected by the buffer design, which, in this paper, is varied using different levels of carbon incorporation. Three epitaxial structures have been fabricated: 1) two with uniform carbon doping profile but different carbon concentration and 2) one with a stepped doping profile. The epitaxial structures have been grown on 4H-SiC using hot-wall metal-organic chemical vapor deposition with residual carbon doping. The leakage currents in OFF-state at 10 V drain voltage were in the same order of magnitude (10-4 A/mm) for the high-doped and stepped-doped buffer. The high-doped material had a current collapse (CC) of 78.8% compared with 16.1% for the stepped-doped material under dynamic I-V conditions. The low-doped material had low CC (5.2%) but poor buffer isolation. Trap characterization revealed that the high-doped material had two trap levels at 0.15 and 0.59 eV, and the low-doped material had one trap level at 0.59 eV.

Ort, förlag, år, upplaga, sidor
IEEE Press, 2015. Vol. 62, nr 7, s. 2162-2169
Nyckelord [en]
Gallium nitride, HEMTs, trap levels, current collapse, dispersion
Nationell ämneskategori
Fysik
Identifikatorer
URN: urn:nbn:se:liu:diva-117136DOI: 10.1109/TED.2015.2428613ISI: 000356457900014OAI: oai:DiVA.org:liu-117136DiVA, id: diva2:805919
Tillgänglig från: 2015-04-17 Skapad: 2015-04-17 Senast uppdaterad: 2017-12-04Bibliografiskt granskad
Ingår i avhandling
1. MOCVD growth of GaN-based high electron mobility transistor structures
Öppna denna publikation i ny flik eller fönster >>MOCVD growth of GaN-based high electron mobility transistor structures
2015 (Engelska)Doktorsavhandling, sammanläggning (Övrigt vetenskapligt)
Abstract [en]

The present work was to improve the overall quality of GaN-based high electron mobility transistor (HEMT) epitaxial structures grown on semi-insulating (SI) SiC and native GaN substrates, using an approach called bottom-to-top optimization. The bottom-to-top optimization means an entire growth process optimization, from in-situ substrate pretreatment to the epitaxial growth and then the cooling process. Great effort was put to gain the understanding of the influence of growth parameters on material properties and consequently to establish an advanced and reproducible growth process. Many state-of-the-art material properties of GaN-based HEMT structures were achieved in this work, including superior structural integrity of AlN nucleation layers for ultra-low thermal boundary resistance, excellent control of residual impurities, outstanding and nearly-perfect crystalline quality of GaN epilayers grown on SiC and native GaN substrates, respectively, and record-high room temperature 2DEG mobility obtained in simple AlGaN/GaN heterostructures.

The epitaxial growth of the wide bandgap III-nitride epilayers like GaN, AlN,  AlGaN, and InAlN, as well as various GaN-based HEMT structures was all carried out in a hot-wall metalorganic chemical vapor deposition (MOCVD) system. A variety of structural and electrical characterizations were routinely used to provide fast feedback for adjusting growth parameters and developing improved growth processes.

Ort, förlag, år, upplaga, sidor
Linköping: Linköping University Electronic Press, 2015. s. 59
Serie
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 1662
Nationell ämneskategori
Fysik
Identifikatorer
urn:nbn:se:liu:diva-117138 (URN)10.3384/diss.diva-117138 (DOI)978-91-7519-073-0 (ISBN)
Disputation
2015-05-12, Planck, Fysikhuset, Campus Valla, Linköping, 10:15 (Engelska)
Opponent
Handledare
Tillgänglig från: 2015-04-17 Skapad: 2015-04-17 Senast uppdaterad: 2019-11-15Bibliografiskt granskad

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Chen, Jr-TaiForsberg, UrbanJanzén, Erik

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