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A nonvolatile memory capacitor based on Au nanocrystals with HfO2 tunneling and blocking layers
Technion Israel Institute Technology, Israel.
Technion Israel Institute Technology, Israel.
Technion Israel Institute Technology, Israel.
Technion Israel Institute Technology, Israel.
Vise andre og tillknytning
2009 (engelsk)Inngår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 95, nr 2, artikkel-id 023104Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

We report on a nonvolatile memory capacitor based on gold nanocrystals serving as charge storage elements located between two HfO2 films acting as the tunneling and control layers. The capacitor has an equivalent oxide thicknesses of 7 nm and exhibits a large hysteresis in the C-V characteristics of 1 and 9 V for gate voltage sweeps of +/- 1 and +/- 7 V, respectively, with no frequency dependence in the range of 10 kHz to 1 MHz. The storage charge density is similar to 1.2x10(13) cm(-2) and the flat band voltage shift is stable for write/erases operations with a voltage swing of +/- 5 V for over 18 h.

sted, utgiver, år, opplag, sider
American Institute of Physics (AIP) , 2009. Vol. 95, nr 2, artikkel-id 023104
Emneord [en]
capacitors; gold; hafnium compounds; hysteresis; nanostructured materials; random-access storage; thin films; tunnelling
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-118564DOI: 10.1063/1.3176411ISI: 000268089200080OAI: oai:DiVA.org:liu-118564DiVA, id: diva2:815494
Merknad

Funding Agencies|Israeli Ministry of Trade and Industry

Tilgjengelig fra: 2015-06-01 Laget: 2015-06-01 Sist oppdatert: 2017-12-04

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