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Quantitative Study on the Role of Supersaturation during Sublimation Growth on the Yield of 50 mm diameter 3C-SiC
Crystal Growth Lab, University of Erlangen.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska fakulteten.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska fakulteten.
Crystal Growth Lab, University of Erlangen.
2015 (engelsk)Inngår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 821, s. 77-80Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

We have investigated the growth of 3C-SiC using sublimation growth in the temperature range from 1800°C to 1950°C. The supersaturation was determined using numerical modeling of the temperature field and gas phase composition by applying quasi-equilibrium thermodynamic conditions. Analysis of the 3C-SiC yield was carried out by optical microscopy, optical absorption, Raman spectroscopy and x-ray analysis. Quantitative data on supersaturation are compared with most stable 3C-SiC nucleation and growth condition. Finally the application to large area growth in a physical vapor transport growth reactor is briefly addressed.

sted, utgiver, år, opplag, sider
2015. Vol. 821, s. 77-80
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URN: urn:nbn:se:liu:diva-119985DOI: 10.4028/www.scientific.net/MSF.821-823.77OAI: oai:DiVA.org:liu-119985DiVA, id: diva2:838883
Tilgjengelig fra: 2015-07-01 Laget: 2015-07-01 Sist oppdatert: 2017-12-04

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