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Topological Insulating Phases in Two-Dimensional Bismuth-Containing Single Layers Preserved by Hydrogenation
Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska fakulteten. University of Federal Bahia, Brazil.
University of Federal Bahia, Brazil.
University of Federal Bahia, Brazil.
University of Federal Bahia, Brazil; University of Federal Bahia, Brazil.
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2015 (engelsk)Inngår i: The Journal of Physical Chemistry C, ISSN 1932-7447, E-ISSN 1932-7455, Vol. 119, nr 41, s. 23599-23606Artikkel i tidsskrift (Fagfellevurdert) Published
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Abstract [en]

Two-dimensional (2D) binary XBi compounds, where X belongs to group III elements (B, Al, Ga, and In), in a buckled honeycomb structure may originate sizable gap Z2 topological insulators (TIs). These are characterized by exhibiting single band inversion at the Γ point as well as nontrivial edge states in their corresponding nanoribbons. By using first-principles calculations, we demonstrate that hydrogenation of XBi single layers leads to distinct and stable crystal structures, which can preserve their topological insulating properties. Moreover, hydrogenation opens a band gap in this new class of 2D Z2 TIs, with distinct intensities, exhibiting an interesting electronic behavior for viable room-temperature applications of these 2D materials. The nature of the global band gap (direct or indirect) and topological insulating properties depend on the X element type and spatial configuration of the sheet, as well as the applied strain. Our results indicate that the geometric configuration can be crucial for preserving totally the topological characteristics of the hydrogenated sheets. We identify sizable band inversions in the band structure for the relaxed hydrogenated GaBi and InBi in their chairlike configurations and for hydrogenated BBi and AlBi under strain. Based on these findings, hydrogenation gives rise to a flexible chemical tunability and can preserve the band topology of the pristine XBi phases.

sted, utgiver, år, opplag, sider
American Chemical Society (ACS), 2015. Vol. 119, nr 41, s. 23599-23606
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URN: urn:nbn:se:liu:diva-123945DOI: 10.1021/acs.jpcc.5b07961ISI: 000363068400036OAI: oai:DiVA.org:liu-123945DiVA, id: diva2:894296
Tilgjengelig fra: 2016-01-14 Laget: 2016-01-14 Sist oppdatert: 2017-11-30bibliografisk kontrollert

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Freitas, Rafael R. Q.Kakanakova-Georgieva, AneliaGueorguiev, Gueorgui Kostov

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