liu.seSearch for publications in DiVA
Endre søk
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
The Role of Chlorine during High Growth Rate Epitaxy
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska fakulteten.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska fakulteten.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska fakulteten.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska fakulteten.ORCID-id: 0000-0003-1000-0437
Vise andre og tillknytning
2015 (engelsk)Inngår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 821-823, s. 141-144Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The influence of chlorine has been investigated for high growth rates of 4H-SiC epilayers on 4o off-cut substrates. Samples were grown at a growth rate of approximately 50 and 100 μm/h and various Cl/Si ratios. The growth rate, net doping concentration and charge carrier lifetime have been studied as a function of Cl/Si ratio. This study shows some indications that a high Cl concentration in the growth cell leads to less availability of Si during the growth process.

sted, utgiver, år, opplag, sider
Pfaffikon, Switzerland: Scientific.Net , 2015. Vol. 821-823, s. 141-144
Emneord [en]
Chemical Vapor Deposition (CVD), Chlorine, Doping, Epitaxy, High Growth Rate
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-123951DOI: 10.4028/www.scientific.net/MSF.821-823.141OAI: oai:DiVA.org:liu-123951DiVA, id: diva2:894315
Konferanse
European Conference on Silicon Carbide & Related Materials, Grenoble, France, 21-25 September 2014
Tilgjengelig fra: 2016-01-14 Laget: 2016-01-14 Sist oppdatert: 2019-02-14bibliografisk kontrollert
Inngår i avhandling
1. CVD growth of SiC for high-power and high-frequency applications
Åpne denne publikasjonen i ny fane eller vindu >>CVD growth of SiC for high-power and high-frequency applications
2019 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

Silicon Carbide (SiC) is a wide bandgap semiconductor that has attracted a lot of interest for electronic applications due to its high thermal conductivity, high saturation electron drift velocity and high critical electric field strength. In recent years commercial SiC devices have started to make their way into high and medium voltage applications.

Despite the advancements in SiC growth over the years, several issues remain. One of these issues is that the bulk grown SiC wafers are not suitable for electronic applications due to the high background doping and high density of basal plane dislocations (BPD). Due to these problems SiC for electronic devices must be grown by homoepitaxy. The epitaxial growth is performed in chemical vapor deposition (CVD) reactors. In this work, growth has been performed in a horizontal hot-wall CVD (HWCVD) reactor. In these reactors it is possible to produce high-quality SiC epitaxial layers within a wide range of doping, both n- and p-type.

SiC is a well-known example of polytypism, where the different polytypes exist as different stacking sequences of the Si-C bilayers. Polytypism makes polytype stability a problem during growth of SiC. To maintain polytype stability during homoepitaxy of the hexagonal polytypes the substrates are usually cut so that the angle between the surface normal and the c-axis is a few degrees, typically 4 or 8°. The off-cut creates a high density of micro-steps at the surface. These steps allow for the replication of the substrates polytype into the growing epitaxial layer, the growth will take place in a step-flow manner. However, there are some drawbacks with step-flow growth. One is that BPDs can replicate from the substrate into the epitaxial layer. Another problem is that 4H-SiC is often used as a substrate for growth of GaN epitaxial layers. The epitaxial growth of GaN has been developed on on-axis substrates (surface normal coincides with c-axis), so epitaxial 4H-SiC layers grown on off-axis substrates cannot be used as substrates for GaN epitaxial growth.

In efforts to solve the problems with off-axis homoepitaxy of 4H-SiC, on-axis homoepitaxy has been developed. In this work, further development of wafer-scale on-axis homoepitaxy has been made. This development has been made on a Si-face of 4H-SiC substrates. The advances include highly resistive epilayers grown on on-axis substrates. In this thesis the ability to control the surface morphology of epitaxial layers grown on on-axis homoepitaxy is demonstrated. This work also includes growth of isotopically enriched 4H-SiC on on-axis substrates, this has been done to increase the thermal conductivity of the grown epitaxial layers.

In (paper 1) on-axis homoepitaxy of 4H-SiC has been developed on 100 mm diameter substrates. This paper also contains comparisons between different precursors. In (paper 2) we have further developed on-axis homoepitaxy on 100 mm diameter wafers, by doping the epitaxial layers with vanadium. The vanadium doping of the epitaxial layers makes the layers highly resistive and thus suitable to use as a substrate for III-nitride growth. In (paper 3) we developed a method to control the surface morphology and reduce the as-grown surface roughness in samples grown on on-axis substrates. In (paper 4) we have increased the thermal conductivity of 4H-SiC epitaxial layers by growing the layers using isotopically enriched precursors. In (paper 5) we have investigated the role chlorine have in homoepitaxial growth of 4H-SiC. In (paper 6) we have investigated the charge carrier lifetime in as-grown samples and traced variations in lifetime to structural defects in the substrate. In (paper 7) we have investigated the formation mechanism of a morphological defect in homoepitaxial grown 4H-SiC.

sted, utgiver, år, opplag, sider
Linköping: Linköping University Electronic Press, 2019. s. 40
Serie
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 1973
HSV kategori
Identifikatorer
urn:nbn:se:liu:diva-154467 (URN)10.3384/diss.diva-154467 (DOI)9789176851494 (ISBN)
Disputas
2019-02-27, Planck, Fysikhuset, Campus Valla, Linköping, 13:15 (engelsk)
Opponent
Veileder
Tilgjengelig fra: 2019-02-14 Laget: 2019-02-14 Sist oppdatert: 2019-02-14bibliografisk kontrollert

Open Access i DiVA

Fulltekst mangler i DiVA

Andre lenker

Forlagets fulltekst

Personposter BETA

Karhu, RobinBooking, IanUl Hassan, JawadIvanov, IvanJanzén, Erik

Søk i DiVA

Av forfatter/redaktør
Karhu, RobinBooking, IanUl Hassan, JawadIvanov, IvanJanzén, Erik
Av organisasjonen
I samme tidsskrift
Materials Science Forum

Søk utenfor DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric

doi
urn-nbn
Totalt: 124 treff
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf