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Electron band bending of polar, semipolar and non-polar GaN surfaces
Academic Science Czech Republic, Czech Republic.
Academic Science Czech Republic, Czech Republic.
Academic Science Czech Republic, Czech Republic.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska fakulteten. N Carolina State University, NC 27695 USA.
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2016 (Engelska)Ingår i: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 119, nr 10, s. 105303-Artikel i tidskrift (Refereegranskat) Published
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Abstract [en]

The magnitudes of the surface band bending have been determined by X-ray photoelectron spectroscopy for polar, semipolar, and non-polar surfaces of wurtzite GaN crystals. All surfaces have been prepared from crystalline GaN samples grown by the hydride-vapour phase epitaxy and separated from sapphire substrates. The Ga 3d core level peak shifts have been used for band bending determination. Small band bending magnitudes and also relatively small difference between the band bendings of the surfaces with opposite polarity have been found. These results point to the presence of electron surface states of different amounts and types on surfaces of different polarity and confirm the important role of the electron surface states in compensation of the bound surface polarity charges in wurtzite GaN crystals. (C) 2016 AIP Publishing LLC.

Ort, förlag, år, upplaga, sidor
AMER INST PHYSICS , 2016. Vol. 119, nr 10, s. 105303-
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URN: urn:nbn:se:liu:diva-127439DOI: 10.1063/1.4943592ISI: 000372976900029OAI: oai:DiVA.org:liu-127439DiVA, id: diva2:925217
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Funding Agencies|Academy of Sciences of the Czech Republic [M100101201]; Czech Science Foundation (GACR) [15-01687S]; NSF [DMR-1207075, OISE-1458427]; Swedish Energy Agency [P39897-1]

Tillgänglig från: 2016-04-30 Skapad: 2016-04-26 Senast uppdaterad: 2017-11-30

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