Epitaxial growth on on-axis substratesShow others and affiliations
2012 (English)In: Silicon Carbide Epitaxy / [ed] Francesco La Via, Kerala, India: Research Signpost, 2012, p. 97-119Chapter in book (Refereed)
Abstract [en]
SiC epitaxial growth using the Chemical Vapour Deposition (CVD) technique on nominally on-axis substrate is presented. Both standard and chloride-based chemistry have been used with the aim to obtain high quality layers suitable for device fabrication. Both homoepitaxy (4H on 4H) and heteroepitaxy (3C on hexag onal substrate) are addressed.
Place, publisher, year, edition, pages
Kerala, India: Research Signpost, 2012. p. 97-119
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-128859ISBN: 978-81-308-0500-9 (print)OAI: oai:DiVA.org:liu-128859DiVA, id: diva2:932671
2016-06-022016-06-022018-09-13Bibliographically approved