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Early stages of growth and crystal structure evolution of boron nitride thin films
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.ORCID-id: 0000-0001-5768-0244
Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska fakulteten. Grenoble INP, France.
Hungarian Academic Science, Hungary.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
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2016 (engelsk)Inngår i: Japanese Journal of Applied Physics, ISSN 0021-4922, E-ISSN 1347-4065, Vol. 55, nr 5, s. 05FD06-Artikkel i tidsskrift (Fagfellevurdert) Published
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Abstract [en]

A study of the nucleation and crystal structure evolution at the early stages of the growth of sp(2)-BN thin films on 6H-SiC and alpha-Al2O3 substrates is presented. The growth is performed at low pressure and high temperature in a hot wall CVD reactor, using ammonia and triethylboron as precursors, and H-2 as carrier gas. From high-resolution transmission electron microscopy and X-ray thin film diffraction measurements we observe that polytype pure rhombohedral BN (r-BN) is obtained on 6H-SiC substrates. On alpha-Al2O3 an AlN buffer obtained by nitridation is needed to promote the growth of hexagonal BN (h-BN) to a thickness of around 4 nm followed by a transition to r-BN growth. In addition, when r-BN is obtained, triangular features show up in plan-view scanning electron microscopy which are not seen on thin h-BN layers. The formation of BN after already one minute of growth is confirmed by X-ray photoelectron spectroscopy. (C) 2016 The Japan Society of Applied Physics

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IOP PUBLISHING LTD , 2016. Vol. 55, nr 5, s. 05FD06-
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URN: urn:nbn:se:liu:diva-128949DOI: 10.7567/JJAP.55.05FD06ISI: 000374697600030OAI: oai:DiVA.org:liu-128949DiVA, id: diva2:934909
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6th International Symposium on Growth of III-Nitrides (ISGN)
Tilgjengelig fra: 2016-06-09 Laget: 2016-06-07 Sist oppdatert: 2018-03-23

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