Atomically resolved microscopy of ion implantation induced dislocation loops in 4H-SiC
2016 (English)In: Materials letters (General ed.), ISSN 0167-577X, E-ISSN 1873-4979, Vol. 181, 325-327 p.Article in journal (Refereed) Published
During high temperature electrical activation of ion-implanted dopant species in SiC, extrinsic dislocation loops are formed on the basal planes of the SiC lattice. Investigations have suggested Si-based loops are caused in accordance with the well-known +1 model. Herein we apply aberration corrected STEM to resolve the atomic structure of these loops. It is shown that the dislocation loops formed during annealing of Al-implanted SiC consist of an extra inserted Si-C bilayer of the (0001) polar sense, which upon insertion into the lattice causes a local extrinsic stacking fault. The +1 model thus needs to be expanded for binary systems. (C) 2016 Elsevier B.V. All rights reserved.
Place, publisher, year, edition, pages
ELSEVIER SCIENCE BV , 2016. Vol. 181, 325-327 p.
Ion implantation; HRSTEM; Dislocation loop; Silicon carbide
IdentifiersURN: urn:nbn:se:liu:diva-131652DOI: 10.1016/j.matlet.2016.06.013ISI: 000381540100080OAI: oai:DiVA.org:liu-131652DiVA: diva2:1014976
Funding Agencies|Swedish Research Council [621-2012-4359, 622-2008-405]2016-10-032016-09-302016-10-03