n-Type conductivity bound by the growth temperature: the case of Al0.72Ga0.28N highly doped by silicon
2016 (English)In: Journal of Materials Chemistry C, ISSN 2050-7526, Vol. 4, no 35, 8291-8296 p.Article in journal (Refereed) Published
High-Al-content AlxGa(1-x)N layers, x similar to 0.72, have been grown by metal organic chemical vapour deposition (MOCVD) at a temperature ranging from 1000 to 1100 degrees C, together with high flow rate of the dopant precursor silane (SiH4) in order to obtain highly Si-doped Al0.72Ga0.28N layers, similar to 1 x 10(19) cm(-3) as measured by secondary ion mass spectrometry (SIMS). Further characterization of the layers by capacitance-voltage (C-V), electron paramagnetic resonance (EPR), and transmission electron microscopy (TEM) measurements reveals the complex role of growth temperature for the n-type conductivity of high-Al-content AlxGa1-xN. While increasing temperature is essential for reducing the incorporation of carbon and oxygen impurities in the layers, it also reduces the amount of silicon incorporated as a donor.
Place, publisher, year, edition, pages
ROYAL SOC CHEMISTRY , 2016. Vol. 4, no 35, 8291-8296 p.
IdentifiersURN: urn:nbn:se:liu:diva-131919DOI: 10.1039/c6tc02825jISI: 000382834900018OAI: oai:DiVA.org:liu-131919DiVA: diva2:1034814
Funding Agencies|Linkoping Linnaeus Initiative for Novel Functional Materials (LiLi-NFM, VR); Swedish Governmental Agency for Innovation Systems (VINNOVA); Swedish Research Council (VR)2016-10-132016-10-112016-10-13