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Vector Magnetometry Using Silicon Vacancies in 4H-SiC Under Ambient Conditions
University of Stuttgart, Germany.
University of Stuttgart, Germany.
University of Stuttgart, Germany.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
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2016 (English)In: PHYSICAL REVIEW APPLIED, ISSN 2331-7019, Vol. 6, no 3, 034001Article in journal (Refereed) Published
Abstract [en]

Point defects in solids promise precise measurements of various quantities. Especially magnetic field sensing using the spin of point defects has been of great interest recently. When optical readout of spin states is used, point defects achieve optical magnetic imaging with high spatial resolution at ambient conditions. Here, we demonstrate that genuine optical vector magnetometry can be realized using the silicon vacancy in SiC, which has an uncommon S = 3/2 spin. To this end, we develop and experimentally test sensing protocols based on a reference field approach combined with multifrequency spin excitation. Our work suggests that the silicon vacancy in an industry-friendly platform, SiC, has the potential for various magnetometry applications under ambient conditions.

Place, publisher, year, edition, pages
AMER PHYSICAL SOC , 2016. Vol. 6, no 3, 034001
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URN: urn:nbn:se:liu:diva-131885DOI: 10.1103/PhysRevApplied.6.034001ISI: 000383252500001OAI: diva2:1034917

Funding Agencies|ERA.Net RUS Plus Program (DIABASE); DFG via priority programme [1601]; EU via ERC Grant SQUTEC; Max Planck Society; Knut and Alice Wallenberg Foundation; KAKENHI [26286047]; EU via ERC Grant Diadems

Available from: 2016-10-13 Created: 2016-10-11 Last updated: 2016-10-13

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Stenberg, PontusKordina, OlleNguyen, Son TienJanzén, Erik
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