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Fabrication of graphene quantum Hall resistance standard in a cryogen-free table-top system
Chalmers, Sweden.
National Phys Lab, England.
National Phys Lab, England.
National Phys Lab, England; Royal Holloway University of London, England.
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2016 (English)In: 2016 CONFERENCE ON PRECISION ELECTROMAGNETIC MEASUREMENTS (CPEM 2016), IEEE , 2016Conference paper (Refereed)
Abstract [en]

We have demonstrated quantum Hall resistance measurements with metrological accuracy in a relatively easy to use and compact cryogen-free system operating at a temperature of around 3.8 K and magnetic field below 5 T. This advance in technology is due to the unique properties of epitaxial graphene on silicon carbide (SiC) which lifts the stringent requirements for quantum hall effect seen in conventional semiconductors. This paper presents the processes involved in fabrication and characterization of metrologically viable epitaxial graphene samples.

Place, publisher, year, edition, pages
IEEE , 2016.
Keyword [en]
Epitaxial layers; Graphene; measurement standards; microfabrication; quantum hall effect
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:liu:diva-132236DOI: 10.1109/CPEM.2016.7540516ISI: 000383955100066ISBN: 978-1-4673-9134-4OAI: oai:DiVA.org:liu-132236DiVA: diva2:1039390
Conference
Conference on Precision Electromagnetic Measurements (CPEM)
Available from: 2016-10-24 Created: 2016-10-21 Last updated: 2016-10-24

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Yakimova, Rositsa
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Semiconductor MaterialsFaculty of Science & Engineering
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