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Structural properties and vertical transport in ZnSe/CdSe superlattices grown on an In0.3Ga0.7As metamorphic buffer layer
Ioffe Institute, Russia.
Ioffe Institute, Russia.
Ioffe Institute, Russia.
Ioffe Institute, Russia.
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2016 (English)In: PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 7-9, WILEY-V C H VERLAG GMBH , 2016, Vol. 13, no 7-9, p. 503-506Conference paper, Published paper (Refereed)
Abstract [en]

We report on the growth by molecular-beam epitaxy of short-period ZnSe/ CdSe superlattices (SLs) on an In0.3Ga0.7As metamorphic buffer layer. Such SLs are considered as a promising material for a wide band-gap photoactive p-n junction in a hybrid monolithic Ge/InxGa1-xAs/In-y(Al,Ga)(1-y)As/II-VI solar cell. Lattice-matching of the SLs to the In0.3Ga0.7As layer is confirmed by X-ray diffractometry. Vertical transport of photoexcited carriers is investigated by means of both steady state and time-resolved photoluminescence techniques in heterostructures containing the ZnSe/CdSe SL with an enlarged quantum well (EQW). Characteristic times of the carrier transport across the SL towards EQW are evaluated in the temperature range 120-300 K. (C) 2016 WILEY-VCH Verlag GmbH amp; Co.

Place, publisher, year, edition, pages
WILEY-V C H VERLAG GMBH , 2016. Vol. 13, no 7-9, p. 503-506
Series
Physica Status Solidi C-Current Topics in Solid State Physics, ISSN 1862-6351
Keywords [en]
metamorphic buffer layer; superlattice; vertical carrier transport; enlarged quantum well
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-133136DOI: 10.1002/pssc.201510305ISI: 000387954400023OAI: oai:DiVA.org:liu-133136DiVA, id: diva2:1055221
Conference
17th International Conference on II-VI Compounds and Related Materials (II-VI)
Available from: 2016-12-12 Created: 2016-12-09 Last updated: 2016-12-12

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CiteExportLink to record
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Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
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Language
  • de-DE
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