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Properties of two-dimensional electron gas in AlGaN/GaN HEMT structures determined by cavity-enhanced THz optical Hall effect
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering. Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, USA.
Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, USA.
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2016 (English)In: Physica Status Solidi C-Current Topics in Solid State Physics, Vol 13 No 5-6, Wiley-VCH Verlagsgesellschaft, 2016, Vol. 13, no 5-6, 369-373 p.Conference paper, Published paper (Refereed)
Abstract [en]

In this work we employ terahertz (THz) ellipsometry to determine two-dimensional electron gas (2DEG) density, mobility and effective mass in AlGaN/GaN high electron mobility transistor structures grown on 4H-SiC substrates. The effect of the GaN interface exposure to low-flow-rate trimethylaluminum (TMA) on the 2DEG properties is studied. The 2DEG effective mass and sheet density are determined tobe in the range of 0.30-0.32m0 and 4.3-5.5×1012 cm–2, respectively. The 2DEG effective mass parameters are found to be higher than the bulk effective mass of GaN, which is discussed in view of 2DEG confinement. It is shown that exposure to TMA flow improves the 2DEG mobility from 2000 cm2/Vs to values above 2200 cm2/Vs. A record mobility of 2332±61 cm2/Vs is determined for the sample with GaN interface exposed to TMA for 30 s. This improvement in mobility is suggested to be due to AlGaN/GaN interface sharpening causing the reduction of interface roughness scattering of electrons in the 2DEG.

Place, publisher, year, edition, pages
Wiley-VCH Verlagsgesellschaft, 2016. Vol. 13, no 5-6, 369-373 p.
Series
Physica Status Solidi C-Current Topics in Solid State Physics, ISSN 1862-6351
Keyword [en]
AlGaN/GaN HEMTs, THz ellipsometry, 2DEG properties, THz optical Hall effect
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-133135DOI: 10.1002/pssc.201510214ISI: 000387957200045OAI: oai:DiVA.org:liu-133135DiVA: diva2:1055223
Conference
11th International Conference on Nitride Semiconductors (ICNS), Beijing, China, August 30-September 4. 2015
Available from: 2016-12-12 Created: 2016-12-09 Last updated: 2016-12-19Bibliographically approved

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Armakavicius, NerijusChen, Jr-TaiHofmann, TinoKuhne, PhilippNilsson, DanielForsberg, UrbanJanzén, ErikDarakchieva, Vanya
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Semiconductor MaterialsFaculty of Science & Engineering
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